Patent Assignment Details
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| Reel/Frame: | 030859/0520 | |
| Pages: | 5 |
| | Recorded: | 07/23/2013 | | |
| Attorney Dkt #: | 13535 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/23/2015
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Application #:
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13948771
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Filing Dt:
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07/23/2013
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Publication #:
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Pub Dt:
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01/30/2014
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Title:
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METHOD FOR PRODUCING P-TYPE ZNO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZNO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZNO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZNO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZNO BASED COMPOUND
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Assignee
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| 2-9-13, NAKAMEGURO |
| MEGURO-KU |
| TOKYO, JAPAN |
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Correspondence name and address
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HOLTZ, HOLTZ, GOODMAN & CHICK PC
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220 FIFTH AVENUE
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16TH FLOOR
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NEW YORK, NY 10001-7708
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