Patent Assignment Details
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Reel/Frame: | 031091/0084 | |
| Pages: | 7 |
| | Recorded: | 08/27/2013 | | |
Attorney Dkt #: | P12H0298/US |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/15/2016
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Application #:
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14010960
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Filing Dt:
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08/27/2013
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Publication #:
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Pub Dt:
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12/04/2014
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Title:
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ISOLATION STRUCTURE HAVING A SECOND IMPURITY REGION WITH GREATER IMPURITY DOPING CONCENTRATION SURROUNDS A FIRST IMPURITY REGION AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR (AS AMEN
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Assignee
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2091, GYEONGCHUNG-DAERO, BUBAL-EUB, ICHEON-SI |
GYEONGGI-DO,, KOREA, REPUBLIC OF |
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Correspondence name and address
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IP & T GROUP LLP
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8230 LEESBURG PIKE
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SUITE 650
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VIENNA, VA 22182
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