Patent Assignment Details
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| Reel/Frame: | 031304/0427 | |
| Pages: | 3 |
| | Recorded: | 09/30/2013 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/24/2015
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Application #:
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14040736
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Filing Dt:
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09/30/2013
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Publication #:
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Pub Dt:
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12/04/2014
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Title:
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METHOD OF FORMING STRAINED SOURCE AND DRAIN REGIONS IN A P-TYPE FINFET STRUCTURE
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Assignee
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| NO.497, GAOSI ROAD, ZHANGJIANG HIGH-TECH PARK, PUDONG |
| SHANGHAI, CHINA |
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Correspondence name and address
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SHANGHAI HUALI MICROELECTRONICS CORPORAT
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3302 TOWER 1
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NO. 388 ZHONG JIANG ROAD
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PUTUO, 200062 CHINA
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