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Patent Assignment Details
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Reel/Frame:032949/0114   Pages: 4
Recorded: 05/22/2014
Attorney Dkt #:018914
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 5
1
Patent #:
Issue Dt:
03/23/1999
Application #:
08906935
Filing Dt:
08/06/1997
Title:
EPITAXIAL WAFER DEVICE INCLUDING AN ACTIVE LAYER HAVING A TWO-PHASE STRUCTURE AND LIGHT-EMITTING DEVICE USING THE WAFER
2
Patent #:
Issue Dt:
08/29/2000
Application #:
09170265
Filing Dt:
10/13/1998
Title:
METHOD OF FORMING EPITAXIAL WAFER FOR LIGHT-EMITTING DEVICE INCLUDING AN ACTIVE LAYER HAVING A TWO-PHASE STRUCTURE
3
Patent #:
Issue Dt:
01/26/2010
Application #:
11352336
Filing Dt:
02/13/2006
Publication #:
Pub Dt:
08/31/2006
Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF
4
Patent #:
Issue Dt:
05/08/2012
Application #:
12088076
Filing Dt:
03/25/2008
Publication #:
Pub Dt:
07/02/2009
Title:
PROCESS FOR FABRICATION OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
5
Patent #:
Issue Dt:
05/29/2012
Application #:
12300302
Filing Dt:
11/10/2008
Publication #:
Pub Dt:
08/27/2009
Title:
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE
Assignor
1
Exec Dt:
04/17/2014
Assignee
1
1, HARUHINAGAHATA
KIYOSU-SHI, AICHI, JAPAN 452-8564
Correspondence name and address
SUGHRUE MION, PLLC
2100 PENNSYLVANIA AVE. NW
SUITE 800
WASHINGTON, DE 20037-3213

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