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Reel/Frame:033378/0151   Pages: 7
Recorded: 07/23/2014
Attorney Dkt #:SF01.0014US
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/15/2016
Application #:
14339443
Filing Dt:
07/23/2014
Publication #:
Pub Dt:
01/29/2015
Title:
Ge-Si P-I-N Photodiode With Reduced Dark Current And Fabrication Method Thereof
Assignors
1
Exec Dt:
07/21/2014
2
Exec Dt:
07/21/2014
3
Exec Dt:
07/21/2014
4
Exec Dt:
07/21/2014
5
Exec Dt:
07/21/2014
6
Exec Dt:
07/21/2014
7
Exec Dt:
07/21/2014
8
Exec Dt:
07/21/2014
Assignee
1
500 WEST CUMMINGS PARK, SUITE 3250
WOBURN, MASSACHUSETTS 01801
Correspondence name and address
HAN IP CORPORATION
4790 IRVINE BOULEVARD SUITE 105-347
IRVINE, CA 92620

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