Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 034757/0313 | |
| Pages: | 30 |
| | Recorded: | 01/14/2015 | | |
| Attorney Dkt #: | 8017-10094-MISC |
| Conveyance: | MERGER (SEE DOCUMENT FOR DETAILS). |
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Total properties:
4
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Patent #:
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Issue Dt:
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08/02/2005
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Application #:
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10105404
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Filing Dt:
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03/26/2002
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Publication #:
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Pub Dt:
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12/26/2002
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Title:
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SEMICONDUCTOR SUBSTRATE MADE OF GROUP III NITRIDE, AND PROCESS FOR MANUFACTURE THEREOF
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Patent #:
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Issue Dt:
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11/02/2004
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Application #:
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10150960
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Filing Dt:
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05/21/2002
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Publication #:
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Pub Dt:
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01/23/2003
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Title:
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METHOD OF FORMING AN EPITAXIALLY GROWN NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE STRUCTURE AND THE SAME SUBSTRATE STRUCTURE
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Patent #:
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Issue Dt:
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03/13/2007
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Application #:
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10519571
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Filing Dt:
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03/09/2005
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Publication #:
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Pub Dt:
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03/02/2006
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Title:
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GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD
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Patent #:
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Issue Dt:
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03/27/2007
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Application #:
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10939404
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Filing Dt:
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09/14/2004
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Publication #:
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Pub Dt:
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02/10/2005
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Title:
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EPITAXIALLY GROWN NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE STRUCTURE WITH LOW DISLOCATION DENSITY
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Assignee
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| 2-1, SHIBAURA 1-CHOME MINATO-KU |
| TOKYO, JAPAN |
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Correspondence name and address
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YOUNG & THOMPSON
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209 MADISON STREET
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SUITE 500
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ALEXANDRIA, VA 22314
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