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Reel/Frame:	036134/0081			Pages:	9
		Recorded:	07/20/2015
Attorney Dkt #:	YUWA
Conveyance:	CORPORATE SPLIT AND CONFIRMATORY ASSIGNMENT EFFECTIVE APRIL 1, 2015

Total properties: 29

Patent #:	7867881	Issue Dt:	01/11/2011	Application #:	12397544	Filing Dt:	03/04/2009
Publication #:	US20090233423	Pub Dt:	09/17/2009
Title:	METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Patent #:	8084925	Issue Dt:	12/27/2011	Application #:	12427348	Filing Dt:	04/21/2009
Publication #:	US20090302715	Pub Dt:	12/10/2009
Title:	PIEZOELECTRIC THIN FILM ELEMENTAL DEVICE, SENSOR AND ACTUATOR

Patent #:	8102026	Issue Dt:	01/24/2012	Application #:	12556635	Filing Dt:	09/10/2009
Publication #:	US20100258812	Pub Dt:	10/14/2010
Title:	GROUP-III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

Patent #:	NONE	Issue Dt:		Application #:	12571527	Filing Dt:	10/01/2009
Publication #:	US20100272141	Pub Dt:	10/28/2010
Title:	NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE

Patent #:	8274087	Issue Dt:	09/25/2012	Application #:	12619972	Filing Dt:	11/17/2009
Publication #:	US20100295055	Pub Dt:	11/25/2010
Title:	NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

Patent #:	9194055	Issue Dt:	11/24/2015	Application #:	12713272	Filing Dt:	02/26/2010
Publication #:	US20100258911	Pub Dt:	10/14/2010
Title:	NITRIDE SEMICONDUCTOR SUBSTRATE

Patent #:	8310135	Issue Dt:	11/13/2012	Application #:	12797340	Filing Dt:	06/09/2010
Publication #:	US20100314972	Pub Dt:	12/16/2010
Title:	PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME

Patent #:	8310136	Issue Dt:	11/13/2012	Application #:	12814544	Filing Dt:	06/14/2010
Publication #:	US20100320874	Pub Dt:	12/23/2010
Title:	PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE

Patent #:	8715413	Issue Dt:	05/06/2014	Application #:	12816458	Filing Dt:	06/16/2010
Publication #:	US20110168082	Pub Dt:	07/14/2011
Title:	METHOD FOR MANUFACTURING A GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING A GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

Patent #:	8232708	Issue Dt:	07/31/2012	Application #:	12816848	Filing Dt:	06/16/2010
Publication #:	US20110006643	Pub Dt:	01/13/2011
Title:	PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE

Patent #:	8304966	Issue Dt:	11/06/2012	Application #:	12819424	Filing Dt:	06/21/2010
Publication #:	US20100320871	Pub Dt:	12/23/2010
Title:	PIEZOELECTRIC THIN FILM ELEMENT AND MANUFACTURING METHOD OF THE PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM DEVICE

Patent #:	8237245	Issue Dt:	08/07/2012	Application #:	12870332	Filing Dt:	08/27/2010
Publication #:	US20110198610	Pub Dt:	08/18/2011
Title:	NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE

Patent #:	8450911	Issue Dt:	05/28/2013	Application #:	12948083	Filing Dt:	11/17/2010
Publication #:	US20110121690	Pub Dt:	05/26/2011
Title:	PIEZOELECTRIC THIN FILM HAVING A HIGH PIEZOELECTRIC CONSTANT AND A LOW LEAK CURRENT

Patent #:	8519602	Issue Dt:	08/27/2013	Application #:	13006842	Filing Dt:	01/14/2011
Publication #:	US20110175488	Pub Dt:	07/21/2011
Title:	PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE USING A PIEZOELECTRIC THIN FILM OF ALKALI-NIOBIUM OXIDE SERIES

Patent #:	8581477	Issue Dt:	11/12/2013	Application #:	13018693	Filing Dt:	02/01/2011
Publication #:	US20110187237	Pub Dt:	08/04/2011
Title:	PIEZOELECTRIC FILM ELEMENT USING (NA,K,LI)NBO3

Patent #:	8426884	Issue Dt:	04/23/2013	Application #:	13214650	Filing Dt:	08/22/2011
Publication #:	US20120049224	Pub Dt:	03/01/2012
Title:	LIGHT EMITTING DIODE WITH SUPPORTING SUBSTRATE SIDE ELECTRODES AND WIRING STRUCTURES

Patent #:	8436373	Issue Dt:	05/07/2013	Application #:	13217860	Filing Dt:	08/25/2011
Publication #:	US20120126259	Pub Dt:	05/24/2012
Title:	LIGHT EMITTING DIODE WITH A LIGHT SOURCE SUITABLE STRUCTURE

Patent #:	8664123	Issue Dt:	03/04/2014	Application #:	13489570	Filing Dt:	06/06/2012
Publication #:	US20130023128	Pub Dt:	01/24/2013
Title:	METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Patent #:	9105755	Issue Dt:	08/11/2015	Application #:	13524300	Filing Dt:	06/15/2012
Publication #:	US20130001644	Pub Dt:	01/03/2013
Title:	METHOD OF MANUFACTURING A NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE

Patent #:	8896187	Issue Dt:	11/25/2014	Application #:	13532081	Filing Dt:	06/25/2012
Publication #:	US20130015392	Pub Dt:	01/17/2013
Title:	PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME, PIEZOELECTRIC FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC FILM DEVICE

Patent #:	9175417	Issue Dt:	11/03/2015	Application #:	13598175	Filing Dt:	08/29/2012
Publication #:	US20130072005	Pub Dt:	03/21/2013
Title:	METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR SUBSTRATE

Patent #:	8446074	Issue Dt:	05/21/2013	Application #:	13636883	Filing Dt:	09/24/2012
Publication #:	US20130009519	Pub Dt:	01/10/2013
Title:	PIEZOELECTRIC THIN-FILM ELEMENT AND PIEZOELECTRIC THIN-FILM DEVICE

Patent #:	9368713	Issue Dt:	06/14/2016	Application #:	13796243	Filing Dt:	03/12/2013
Publication #:	US20130249354	Pub Dt:	09/26/2013
Title:	PIEZOELECTRIC FILM-ATTACHED SUBSTRATE, PIEZOELECTRIC FILM ELEMENT AND METHOD OF MANUFACTURING THE SAME

Patent #:	9013026	Issue Dt:	04/21/2015	Application #:	14020207	Filing Dt:	09/06/2013
Publication #:	US20140070371	Pub Dt:	03/13/2014
Title:	GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND RECTIFIER DIODE

Patent #:	NONE	Issue Dt:		Application #:	14020594	Filing Dt:	09/06/2013
Publication #:	US20140083350	Pub Dt:	03/27/2014
Title:	METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

Patent #:	NONE	Issue Dt:		Application #:	14610000	Filing Dt:	01/30/2015
Publication #:	US20150140791	Pub Dt:	05/21/2015
Title:	APPARATUS FOR PRODUCING METAL CHLORIDE GAS

Patent #:	9397232	Issue Dt:	07/19/2016	Application #:	14678049	Filing Dt:	04/03/2015
Publication #:	US20150214308	Pub Dt:	07/30/2015
Title:	NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE

Assignor

Exec Dt:

06/25/2015

Assignee

880 ISAGOZAWA-CHO

HITACHI-SHI

IBARAKI-KEN, JAPAN

Correspondence name and address
	FLEIT GIBBONS GUTMAN BONGINI & BIANCO PL
	21355 E. DIXIE HIGHWAY
	SUITE 115
	MIAMI, FL 33180

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