Patent Assignment Details
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| Reel/Frame: | 037668/0001 | |
| Pages: | 6 |
| | Recorded: | 02/04/2016 | | |
| Attorney Dkt #: | 92396-395754 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/14/2017
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Application #:
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14910169
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Filing Dt:
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02/04/2016
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Publication #:
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Pub Dt:
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06/09/2016
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Title:
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SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE WHERE DEPRESSION SUPRESSION LAYER IS FORMED ON BACKSIDE SURFACE OF BASE SUBSTRATE OPPOSITE TO MAIN SURFACE ON WHICH EPITAXIAL LAYER IS FORMED
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Assignee
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| 5-33, KITAHAMA 4-CHOME, CHUO-KU |
| OSAKA-SHI, OSAKA, JAPAN 541-0041 |
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Correspondence name and address
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MICHAEL A. SARTORI, PH.D.
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P.O. BOX 34385
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VENABLE LLP
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WASHINGTON, DC 20043-9998
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