Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 037730/0397 | |
| Pages: | 5 |
| | Recorded: | 02/12/2016 | | |
| Attorney Dkt #: | HIR |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
13
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Patent #:
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Issue Dt:
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01/12/2016
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Application #:
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12003231
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Filing Dt:
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12/20/2007
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Publication #:
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Pub Dt:
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03/05/2009
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Title:
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Method for producing group III Nitride single crystal
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Patent #:
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Issue Dt:
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01/26/2016
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Application #:
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12222907
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Filing Dt:
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08/19/2008
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Publication #:
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Pub Dt:
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12/25/2008
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Title:
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NITRIDE-BASED SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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10/03/2017
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Application #:
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12591423
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Filing Dt:
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11/19/2009
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Publication #:
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Pub Dt:
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05/12/2011
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Title:
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NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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01/05/2016
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Application #:
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13137202
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Filing Dt:
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07/27/2011
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Publication #:
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Pub Dt:
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02/02/2012
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Title:
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Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device
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Patent #:
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Issue Dt:
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08/02/2016
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Application #:
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13137689
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Filing Dt:
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09/02/2011
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Publication #:
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Pub Dt:
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03/08/2012
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Title:
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Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device
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Patent #:
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Issue Dt:
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01/12/2016
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Application #:
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13569983
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Filing Dt:
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08/08/2012
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Publication #:
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Pub Dt:
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02/21/2013
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Title:
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METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE
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Patent #:
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NONE
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Issue Dt:
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Application #:
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13615421
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Filing Dt:
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09/13/2012
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Publication #:
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Pub Dt:
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04/18/2013
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Title:
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NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR ELEMENT
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Patent #:
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Issue Dt:
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03/22/2016
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Application #:
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13746860
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Filing Dt:
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01/22/2013
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Publication #:
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Pub Dt:
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07/25/2013
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Title:
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PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC DEVICE
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Patent #:
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NONE
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Issue Dt:
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Application #:
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13781568
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Filing Dt:
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02/28/2013
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Publication #:
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Pub Dt:
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09/05/2013
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Title:
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GALLIUM NITRIDE SUBSTRATE AND OPTICAL DEVICE USING THE SAME
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Patent #:
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Issue Dt:
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06/07/2016
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Application #:
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13794522
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Filing Dt:
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03/11/2013
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Publication #:
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Pub Dt:
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09/26/2013
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Title:
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METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND METHOD FOR FABRICATING A NITRIDE SEMICONDUCTOR TEMPLATE
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Patent #:
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Issue Dt:
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08/28/2018
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Application #:
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14163967
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Filing Dt:
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01/24/2014
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Publication #:
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Pub Dt:
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07/17/2014
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Title:
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NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD INCLUDING GROWING NITRIDE SEMICONDUCTOR CRYSTAL OVER SEED CRYSTAL SUBSTRATE
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Patent #:
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Issue Dt:
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04/11/2017
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Application #:
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14212821
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Filing Dt:
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03/14/2014
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Publication #:
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Pub Dt:
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09/25/2014
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Title:
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PIEZOELECTRIC THIN-FILM ELEMENT, PIEZOELECTRIC SENSOR AND VIBRATION GENERATOR
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Patent #:
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Issue Dt:
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09/17/2019
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Application #:
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14831514
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Filing Dt:
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08/20/2015
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Publication #:
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Pub Dt:
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12/10/2015
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Title:
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METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE
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Assignee
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| 27-1, SHINKAWA 2-CHOME, CHUO-KU |
| TOKYO, JAPAN 104-8260 |
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Correspondence name and address
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MCGINN I.P. LAW GROUP, PLLC
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8321 OLD COURTHOUSE ROAD, SUITE 200
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VIENNA, VA 22182-3817
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