Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 038444/0891 | |
| Pages: | 2 |
| | Recorded: | 05/03/2016 | | |
| Attorney Dkt #: | 8013-10498-MISC |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
2
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Patent #:
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Issue Dt:
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11/02/2004
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Application #:
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10150960
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Filing Dt:
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05/21/2002
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Publication #:
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Pub Dt:
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01/23/2003
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Title:
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METHOD OF FORMING AN EPITAXIALLY GROWN NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE STRUCTURE AND THE SAME SUBSTRATE STRUCTURE
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Patent #:
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Issue Dt:
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03/27/2007
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Application #:
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10939404
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Filing Dt:
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09/14/2004
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Publication #:
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Pub Dt:
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02/10/2005
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Title:
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EPITAXIALLY GROWN NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE STRUCTURE WITH LOW DISLOCATION DENSITY
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Assignee
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| 27-1 SHINKAWA 2-CHOME, CHUO-KU |
| TOKYO, JAPAN |
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Correspondence name and address
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YOUNG & THOMPSON
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209 MADISON STREET
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SUITE 500
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ALEXANDRIA, VA 22314
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