Patent Assignment Details
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| Reel/Frame: | 042241/0380 | |
| Pages: | 8 |
| | Recorded: | 05/04/2017 | | |
| Attorney Dkt #: | 503430US |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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01/22/2019
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Application #:
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15586755
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Filing Dt:
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05/04/2017
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Publication #:
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Pub Dt:
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11/30/2017
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Title:
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Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage
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Assignees
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| 1-1 SHIBAURA 1-CHOME |
| MINATO-KU, TOKYO, JAPAN 105-8001 |
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| 2-1 SENGEN 1-CHOME |
| TSUKUBA-SHI, IBARAKI, JAPAN 305-0047 |
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Correspondence name and address
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OBLON, ET AL.
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1940 DUKE STREET
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ALEXANDRIA, VA 22314
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