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Reel/Frame:043470/0182   Pages: 3
Recorded: 09/01/2017
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
11/02/2004
Application #:
09858400
Filing Dt:
05/16/2001
Publication #:
Pub Dt:
11/06/2003
Title:
PROCESS FOR FORMING A LOW RESISTIVITY TITANIUM SILICIDE LAYER ON A SILICON SEMICONDUCTOR SUBSTRATE AND THE RESULTING DEVICE
Assignors
1
Exec Dt:
02/25/1999
2
Exec Dt:
02/25/1999
3
Exec Dt:
02/25/1999
Assignees
1
GROENEWOUDSEWEG 1
EINDHOVEN, NETHERLANDS 5621 BA
2
7, AVENUE GALLIENI
GENTILLY, FRANCE F-94250
Correspondence name and address
DAVID L. SCHAEFFER
411 EAST PLUMERIA DRIVE, MS41
NXP SEMICONDUCTORS, IP&L
SAN JOSE, CA 95134

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