Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 043585/0207 | |
| Pages: | 6 |
| | Recorded: | 09/14/2017 | | |
| Attorney Dkt #: | 30831.40 (L0040) |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/19/2019
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Application #:
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15703850
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Filing Dt:
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09/13/2017
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Publication #:
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Pub Dt:
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03/22/2018
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Title:
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Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
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Assignee
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| 352 HENRY ADMINISTRATION BUILDING |
| 506 SOUTH WRIGHT STREET |
| URBANA, ILLINOIS 61801 |
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Correspondence name and address
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PATENT DOCKET ADMINISTRATOR LOWENSTEIN S
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ONE LOWENSTEIN DRIVE
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ROSELAND, NJ 07068
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