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Reel/Frame:043780/0830   Pages: 2
Recorded: 10/04/2017
Attorney Dkt #:021740
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
08/01/2006
Application #:
10351385
Filing Dt:
01/27/2003
Publication #:
Pub Dt:
08/07/2003
Title:
MANUFACTURING METHOD FOR BURIED INSULATING LAYER-TYPE SEMICONDUCTOR SILICON CARBIDE SUBSTRATE
Assignor
1
Exec Dt:
10/02/2017
Assignee
1
2, KITA 3-JO NISHI 1-CHOME, CHUO-KU,
SAPPORO-SHI, HOKKAIDO, JAPAN 0600-003
Correspondence name and address
KRATZ, QUINTOS & HANSON, LLP
1420 K STREET, N.W.
4TH. FLOOR
WASHINGTON, DC 20005

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