Patent Assignment Details
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| Reel/Frame: | 043940/0086 | |
| Pages: | 5 |
| | Recorded: | 10/24/2017 | | |
| Attorney Dkt #: | T1516.10373US01 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/01/2020
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Application #:
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15719245
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Filing Dt:
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09/28/2017
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Publication #:
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Pub Dt:
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03/28/2019
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Title:
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METHOD OF FABRICATING GATE OXIDE OF SEMICONDUCTOR DEVICE
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Assignee
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| NO.8, LI-HSIN RD.6 |
| SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU, TAIWAN 300 |
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Correspondence name and address
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R. BURNS ISRAELSEN
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MASCHOFF BRENNAN
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1389 CENTER DR. SUITE 300
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PARK CITY, UT 84098
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