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Reel/Frame:045945/0129   Pages: 6
Recorded: 05/31/2018
Attorney Dkt #:ASA-256
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
15993708
Filing Dt:
05/31/2018
Publication #:
Pub Dt:
12/13/2018
Title:
A SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING A GATE FORMED IN A SHALLOW TRENCH AND A SOURCE CONTACT FORMED IN A DEEPER TRENCH
Assignors
1
Exec Dt:
04/25/2018
2
Exec Dt:
05/07/2018
3
Exec Dt:
04/16/2018
4
Exec Dt:
04/25/2018
Assignees
1
1-1 TANABESHINDEN, KAWASAKI-KU
KAWASAKI-SHI, KANAGAWA, JAPAN 210-9530
2
3-1, KASUMIGASEKI 1-CHOME, CHIYODA-KU
TOKYO, JAPAN 100-8921
Correspondence name and address
RABIN & BERDO, P.C.
1101 14TH ST., N.W., SUITE 500
WASHINGTON, DC 20005

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