Patent Assignment Details
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| Reel/Frame: | 045991/0609 | |
| Pages: | 16 |
| | Recorded: | 04/20/2018 | | |
| Conveyance: | CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). |
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Total properties:
5
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Patent #:
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Issue Dt:
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09/14/2010
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Application #:
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10589680
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Filing Dt:
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08/16/2006
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Publication #:
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Pub Dt:
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09/11/2008
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Title:
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SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHOD OF PRODUCTION OF SAME
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Patent #:
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Issue Dt:
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09/21/2010
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Application #:
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11629377
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Filing Dt:
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12/12/2006
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Publication #:
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Pub Dt:
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02/14/2008
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Title:
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SILICON CARBIDE SINGLE CRYSTAL AND SINGLE CRYSTAL WAFER
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Patent #:
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Issue Dt:
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10/25/2011
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Application #:
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12469299
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Filing Dt:
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05/20/2009
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Publication #:
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Pub Dt:
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11/25/2010
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Title:
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SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE
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Patent #:
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Issue Dt:
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05/15/2012
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Application #:
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12708124
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Filing Dt:
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02/18/2010
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Publication #:
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Pub Dt:
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06/17/2010
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Title:
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MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME
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Patent #:
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Issue Dt:
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07/05/2011
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Application #:
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12735405
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Filing Dt:
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07/13/2010
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Publication #:
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Pub Dt:
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11/18/2010
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Title:
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SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM
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Assignee
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| 6-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, |
| TOKYO, JAPAN 100-8071 |
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Correspondence name and address
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CPA GLOBAL LIMITED
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LIBERATION HOUSE
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CASTLE STREET
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ST HELIER, JE1 1BL JERSEY
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