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Reel/Frame:046006/0887   Pages: 14
Recorded: 06/06/2018
Attorney Dkt #:MI22-6398
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
10483407
Issue Dt:
11/19/2019
Application #:
15957594
Filing Dt:
04/19/2018
Publication #:
US20190326445
Pub Dt:
10/24/2019
Title:
METHODS OF FORMING Si3NX, METHODS OF FORMING INSULATOR MATERIAL BETWEEN A CONTROL GATE AND CHARGE-STORAGE MATERIAL OF A PROGRAMMABLE CHARGE-STORAGE TRANSISTOR, AND METHODS OF FORMING AN ARRAY OF ELEVATIONALLY-EXTENDING STRINGS OF MEMORY CELLS AND A PROGRAMMABLE CHARGE-STORAGE TRANSISTOR MANUFACTURED IN ACCORDANCE WITH METHODS
Assignors
1
WANG, FEI
Exec Dt:
05/02/2018
2
SHROTRI, KUNAL
Exec Dt:
05/02/2018
3
HULL, JEFFERY B.
Exec Dt:
05/02/2018
4
KHANDEKAR, ANISH A.
Exec Dt:
05/02/2018
5
MAO, DUO
Exec Dt:
05/03/2018
6
XU, ZHIXIN
Exec Dt:
03/27/2018
7
ENG, EE EE
Exec Dt:
05/31/2018
8
LI, JIE
Exec Dt:
05/02/2018
9
LIANG, DONG
Exec Dt:
05/02/2018
Assignee
1
MICRON TECHNOLOGY, INC.
8000 SOUTH FEDERAL WAY, MS 1- 525
BOISE, IDAHO 83716
Correspondence name and address
WELLS ST. JOHN, P.S.
601 W. MAIN AVENUE
SUITE 600
SPOKANE, WA 99201

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