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Reel/Frame:046222/0488   Pages: 4
Recorded: 06/28/2018
Attorney Dkt #:74413-US-PA
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/08/2022
Application #:
15957912
Filing Dt:
04/20/2018
Publication #:
Pub Dt:
10/24/2019
Title:
GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
Assignors
1
Exec Dt:
04/11/2018
2
Exec Dt:
04/11/2018
3
Exec Dt:
04/11/2018
4
Exec Dt:
04/11/2018
Assignee
1
NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK,
HSINCHU, TAIWAN 30078
Correspondence name and address
JCIPRNET
P.O. BOX 600 TAIPEI GUTING
TAIPEI CITY, 10099 TAIWAN

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