Patent Assignment Details
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Reel/Frame: | 048323/0363 | |
| Pages: | 4 |
| | Recorded: | 02/13/2019 | | |
Attorney Dkt #: | Q245047 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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04/05/2022
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Application #:
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16325281
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Filing Dt:
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02/13/2019
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Publication #:
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Pub Dt:
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06/13/2019
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Title:
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Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
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Assignee
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13-9, SHIBADAIMON 1-CHOME, MINATO-KU |
TOKYO, JAPAN 105-8518 |
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Correspondence name and address
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SUGHRUE MION, PLLC
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2100 PENNSYLVANIA AVENUE, N.W.
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SUITE 800
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WASHINGTON, DC 20037
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