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Patent Assignment Details
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Reel/Frame:049403/0835   Pages: 3
Recorded: 06/07/2019
Attorney Dkt #:30100-6521998P
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 9
1
Patent #:
Issue Dt:
02/18/2003
Application #:
09472008
Filing Dt:
12/27/1999
Title:
ELECTRODE STRUCTURE FOR NITRIDE III-V COMPOUND SEMICONDUCTOR DEVICES
2
Patent #:
Issue Dt:
07/28/2009
Application #:
11797309
Filing Dt:
05/02/2007
Publication #:
Pub Dt:
12/27/2007
Title:
POWER AMPLIFIER SUPPRESSING RADIATION OF SECOND HARMONIC OVER WIDE FREQUENCY BAND
3
Patent #:
Issue Dt:
07/31/2012
Application #:
11889135
Filing Dt:
08/09/2007
Publication #:
Pub Dt:
02/14/2008
Title:
SEMICONDUCTOR DEVICE
4
Patent #:
Issue Dt:
09/13/2011
Application #:
11940157
Filing Dt:
11/14/2007
Publication #:
Pub Dt:
12/18/2008
Title:
FIELD EFFECT TRANSISTOR HAVING RECESSED GATE IN COMPOSITIONAL GRADED LAYER
5
Patent #:
Issue Dt:
12/08/2009
Application #:
11980567
Filing Dt:
10/31/2007
Publication #:
Pub Dt:
09/04/2008
Title:
INSULATED-GATE FIELD EFFECT TRANSISTOR
6
Patent #:
Issue Dt:
08/24/2010
Application #:
12238242
Filing Dt:
09/25/2008
Publication #:
Pub Dt:
03/26/2009
Title:
SWITCHING CIRCUIT HAVING LOW THRESHOLD VOLTAGE
7
Patent #:
Issue Dt:
08/23/2011
Application #:
12348927
Filing Dt:
01/06/2009
Publication #:
Pub Dt:
08/20/2009
Title:
FIELD EFFECT TRANSISTOR
8
Patent #:
Issue Dt:
07/01/2014
Application #:
13574993
Filing Dt:
07/24/2012
Publication #:
Pub Dt:
11/22/2012
Title:
COMPOSITE SEMICONDUCTOR DEVICE
9
Patent #:
Issue Dt:
08/18/2015
Application #:
14372366
Filing Dt:
07/15/2014
Publication #:
Pub Dt:
12/04/2014
Title:
EPITAXIAL WAFER FOR HETEROJUNCTION TYPE FIELD EFFECT TRANSISTOR
Assignor
1
Exec Dt:
05/30/2019
Assignee
1
10-1, HIGASHIKOTARI 1-CHOME
NAGAOKAKYO-SHI, KYOTO 617-8555, JAPAN
Correspondence name and address
DANIEL M. GURFINKEL
DENNEMEYER & ASSOCIATES, LLC.
2 NORTH RIVERSIDE PLAZA, SUITE 1500
CHICAGO, IL 60606

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