Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 050003/0675 | |
| Pages: | 2 |
| | Recorded: | 08/08/2019 | | |
| Attorney Dkt #: | 5481/0421PUS1 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/28/2021
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Application #:
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16520569
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Filing Dt:
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07/24/2019
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Publication #:
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Pub Dt:
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01/28/2021
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Title:
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SEMICONDUCTOR MEMORY STRUCTURE HAVING DRAIN STRESSOR, SOURCE STRESSOR AND BURIED GATE AND METHOD OF MANUFACTURING THE SAME
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Assignee
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| NO.98, NANLIN RD., TAISHAN DIST., |
| NEW TAIPEI CITY, TAIWAN 243 |
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Correspondence name and address
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MUNCY, GEISSLER, OLDS & LOWE, PC
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4000 LEGATO RD., SUITE 310
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FAIRFAX, VA 22033
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05/13/2024 05:49 AM
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