Patent Assignment Details
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| Reel/Frame: | 052198/0383 | |
| Pages: | 4 |
| | Recorded: | 03/23/2020 | | |
| Attorney Dkt #: | TSMP20192011US00 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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10/25/2022
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Application #:
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16811079
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Filing Dt:
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03/06/2020
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Publication #:
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Pub Dt:
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04/29/2021
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Title:
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Method of Forming a Semiconductor Device by a Replacement Gate Process
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Assignee
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| 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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Correspondence name and address
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SLATER MATSIL, LLP
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17950 PRESTON RD., SUTE 1000
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DALLAS, TX 75252
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05/10/2024 03:21 AM
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