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Reel/Frame:053136/0902   Pages: 7
Recorded: 07/07/2020
Attorney Dkt #:44015829US2
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
11075276
Issue Dt:
07/27/2021
Application #:
16594596
Filing Dt:
10/07/2019
Publication #:
US20200111885
Pub Dt:
04/09/2020
Title:
METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) METAL GATE MATERIALS USING ATOMIC LAYER DEPOSITION (ALD) PROCESSES WITH METAL BASED PRECURSORS
Assignors
1
LIN, YONGJING
Exec Dt:
04/17/2020
2
CHEN, SHIH CHUNG
Exec Dt:
04/17/2020
3
YOSHIDA, NAOMI
Exec Dt:
04/20/2020
4
DONG, LIN
Exec Dt:
05/01/2020
5
WU, LIQI
Exec Dt:
05/01/2020
6
YU, SANG-HO
Exec Dt:
10/09/2019
7
WANG, RONGJUN
Exec Dt:
05/07/2020
8
HUNG, STEVEN
Exec Dt:
07/01/2020
9
RAMOS, KARLA BERNAL
Exec Dt:
07/01/2020
10
YANG, YIXIONG
Exec Dt:
07/06/2020
11
TANG, WEI
Exec Dt:
10/19/2019
Assignee
1
APPLIED MATERIALS, INC.
3050 BOWERS AVENUE
SANTA CLARA, CALIFORNIA 95054
Correspondence name and address
MOSER TABOADA/ALAN TABOADA
1030 BROAD STREET
SUITE 203
SHREWSBURY, NJ 07702

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