Total properties:
242
Page
1
of
3
Pages:
1 2 3
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/23/1993
|
Application #:
|
07715400
|
Filing Dt:
|
06/14/1991
|
|
Title:
|
JUNCTION FIELD-EFFECT TRANSISTOR FORMED IN SILICON CARBIDE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/07/1995
|
Application #:
|
07798219
|
Filing Dt:
|
11/26/1991
|
|
Title:
|
NONVOLATILE RANDOM ACCESS MEMORY DEVICE HAVING TRANSISTOR AND CAPACITOR MADE IN SILICON CARBIDE SUBSTRATE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/17/1995
|
Application #:
|
07893642
|
Filing Dt:
|
06/05/1992
|
|
Title:
|
METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/10/1998
|
Application #:
|
07925823
|
Filing Dt:
|
08/07/1992
|
|
Title:
|
SILICON CARBIDE MOSFET HAVING SELF-ALIGNED GATE STRUCTURE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/23/1996
|
Application #:
|
08103866
|
Filing Dt:
|
08/09/1993
|
|
Title:
|
SILICON CARBIDE THYRISTOR
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/21/1997
|
Application #:
|
08188469
|
Filing Dt:
|
01/27/1994
|
|
Title:
|
A METHOD OF MAKING A SINGLE CRYSTALS GA*N ARTICLE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/28/1995
|
Application #:
|
08198679
|
Filing Dt:
|
02/18/1994
|
|
Title:
|
SILICON CARBIDE PHOTODIODE WITH IMPROVED SHORT WAVELENGTH RESPONSE AND VERY LOW LEAKAGE CURRENT
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/11/1997
|
Application #:
|
08307173
|
Filing Dt:
|
09/16/1994
|
|
Title:
|
SELF-ALIGNED FIELD-EFFECT TRANSISTOR FOR HIGH FREQUENCY APPLICATIONS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/13/1997
|
Application #:
|
08352887
|
Filing Dt:
|
12/09/1994
|
|
Title:
|
METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/18/1997
|
Application #:
|
08353456
|
Filing Dt:
|
12/09/1994
|
|
Title:
|
METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/26/1999
|
Application #:
|
08554319
|
Filing Dt:
|
11/08/1995
|
|
Title:
|
PROCESS FOR REDUCING DEFECTS IN OXIDE LAYERS ON SILICON CARBIDE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/07/1997
|
Application #:
|
08636952
|
Filing Dt:
|
04/24/1996
|
|
Title:
|
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE BY THE USE OF AN IMPLANTING STEP
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/17/1998
|
Application #:
|
08659412
|
Filing Dt:
|
06/06/1996
|
|
Title:
|
SILICON CARBIDE METAL-INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/07/1998
|
Application #:
|
08752716
|
Filing Dt:
|
11/19/1996
|
|
Title:
|
METHOD OF OBTAINING HIGH QUALITY SILICON DIOXIDE PASSIVATION ON SILICON CARBIDE AND RESULTING PASSIVATED STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/03/1998
|
Application #:
|
08939710
|
Filing Dt:
|
09/29/1997
|
|
Title:
|
SILICON CARBIDE METAL-INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/13/1999
|
Application #:
|
08953420
|
Filing Dt:
|
10/17/1997
|
|
Title:
|
FIELD CONTROLLED SEMICONDUCTOR DEVICE OF SIC AND A METHOD FOR PRODUCTION THEREOF
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/05/2000
|
Application #:
|
08984473
|
Filing Dt:
|
12/03/1997
|
|
Title:
|
GAN-BASED DEVICES USING (GA, AL, IN)N BASE LAYERS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/13/2001
|
Application #:
|
09096967
|
Filing Dt:
|
06/12/1998
|
|
Title:
|
NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/12/2001
|
Application #:
|
09141795
|
Filing Dt:
|
08/28/1998
|
|
Title:
|
LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/27/2002
|
Application #:
|
09179049
|
Filing Dt:
|
10/26/1998
|
|
Title:
|
LOW DEFECT DENSITY (GA, AL, IN)N AND HVPE PROCESS FOR MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/03/2000
|
Application #:
|
09247469
|
Filing Dt:
|
02/08/1999
|
|
Title:
|
A LATERAL FIELD EFFECT TRANSISTOR OF SIC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/21/2001
|
Application #:
|
09298116
|
Filing Dt:
|
04/23/1999
|
|
Title:
|
FIELD EFFECT TRANSISTOR OF SIC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/22/2003
|
Application #:
|
09524062
|
Filing Dt:
|
03/13/2000
|
|
Title:
|
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/05/2002
|
Application #:
|
09546821
|
Filing Dt:
|
04/11/2000
|
|
Title:
|
Method of forming vias in silicon carbide and resulting devices and circuits
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/10/2002
|
Application #:
|
09605195
|
Filing Dt:
|
06/28/2000
|
|
Title:
|
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/27/2004
|
Application #:
|
09633598
|
Filing Dt:
|
08/07/2000
|
|
Title:
|
INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS, AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/18/2003
|
Application #:
|
09656595
|
Filing Dt:
|
09/07/2000
|
|
Title:
|
GAN-BASED DEVICES USING THICK (GA, AL, IN)N BASE LAYERS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/26/2002
|
Application #:
|
09701951
|
Filing Dt:
|
02/16/2001
|
|
Title:
|
NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/20/2002
|
Application #:
|
09781732
|
Filing Dt:
|
02/12/2001
|
|
Publication #:
|
|
Pub Dt:
|
07/26/2001
| | | | |
|
Title:
|
LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/26/2005
|
Application #:
|
09787189
|
Filing Dt:
|
03/15/2001
|
|
Title:
|
LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/24/2003
|
Application #:
|
09821360
|
Filing Dt:
|
03/29/2001
|
|
Publication #:
|
|
Pub Dt:
|
08/30/2001
| | | | |
|
Title:
|
NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/03/2002
|
Application #:
|
09877437
|
Filing Dt:
|
06/08/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/12/2002
| | | | |
|
Title:
|
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/06/2005
|
Application #:
|
09929789
|
Filing Dt:
|
08/14/2001
|
|
Publication #:
|
|
Pub Dt:
|
03/07/2002
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/20/2004
|
Application #:
|
09933943
|
Filing Dt:
|
08/21/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/27/2001
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/25/2005
|
Application #:
|
09947253
|
Filing Dt:
|
09/05/2001
|
|
Publication #:
|
|
Pub Dt:
|
06/06/2002
| | | | |
|
Title:
|
FREE-STANDING (AL, GA, IN)N AND PARTING METHOD FOR FORMING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/04/2003
|
Application #:
|
09992766
|
Filing Dt:
|
11/06/2001
|
|
Publication #:
|
|
Pub Dt:
|
06/06/2002
| | | | |
|
Title:
|
METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/12/2004
|
Application #:
|
10003331
|
Filing Dt:
|
10/31/2001
|
|
Publication #:
|
|
Pub Dt:
|
12/05/2002
| | | | |
|
Title:
|
LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/18/2003
|
Application #:
|
10007431
|
Filing Dt:
|
11/08/2001
|
|
Publication #:
|
|
Pub Dt:
|
05/09/2002
| | | | |
|
Title:
|
METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/04/2003
|
Application #:
|
10083071
|
Filing Dt:
|
02/26/2002
|
|
Publication #:
|
|
Pub Dt:
|
10/24/2002
| | | | |
|
Title:
|
LAYERED DIELECTRIC ON SILICON CARBIDE SEMICONDUCTOR STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/13/2005
|
Application #:
|
10103226
|
Filing Dt:
|
03/21/2002
|
|
Publication #:
|
|
Pub Dt:
|
11/14/2002
| | | | |
|
Title:
|
LOW DEFECT DENSITY (GA, AL, IN) N AND HVPE PROCESS FOR MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/05/2011
|
Application #:
|
10107001
|
Filing Dt:
|
03/25/2002
|
|
Publication #:
|
|
Pub Dt:
|
09/25/2003
| | | | |
|
Title:
|
DOPED GROUP III-V NITRIDE MATERIALS, AND MICROELECTRONIC DEVICES AND DEVICE PRECURSOR STRUCTURES COMPRISING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/20/2005
|
Application #:
|
10249448
|
Filing Dt:
|
04/10/2003
|
|
Publication #:
|
|
Pub Dt:
|
12/02/2004
| | | | |
|
Title:
|
LAYERED SEMICONDUCTOR DEVICES WITH CONDUCTIVE VIAS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/04/2005
|
Application #:
|
10272761
|
Filing Dt:
|
10/17/2002
|
|
Publication #:
|
|
Pub Dt:
|
07/10/2003
| | | | |
|
Title:
|
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/03/2012
|
Application #:
|
10313561
|
Filing Dt:
|
12/06/2002
|
|
Publication #:
|
|
Pub Dt:
|
11/20/2003
| | | | |
|
Title:
|
III-V NITRIDE HOMOEPITAXIAL MATERIAL OF IMPROVED QUALITY FORMED ON FREE-STANDING (AL,IN,GA)N SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/02/2010
|
Application #:
|
10369846
|
Filing Dt:
|
02/19/2003
|
|
Publication #:
|
|
Pub Dt:
|
08/21/2003
| | | | |
|
Title:
|
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/14/2010
|
Application #:
|
10513009
|
Filing Dt:
|
10/27/2004
|
|
Publication #:
|
|
Pub Dt:
|
08/04/2005
| | | | |
|
Title:
|
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/12/2010
|
Application #:
|
10570852
|
Filing Dt:
|
03/06/2006
|
|
Publication #:
|
|
Pub Dt:
|
11/09/2006
| | | | |
|
Title:
|
METHOD AND DEVICE OF FIELD EFFECT TRANSISTOR INCLUDING A BASE SHORTED TO A SOURCE REGION
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/30/2007
|
Application #:
|
10618024
|
Filing Dt:
|
07/11/2003
|
|
Publication #:
|
|
Pub Dt:
|
01/13/2005
| | | | |
|
Title:
|
SEMI-INSULATING GAN AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/25/2006
|
Application #:
|
10707898
|
Filing Dt:
|
01/22/2004
|
|
Publication #:
|
|
Pub Dt:
|
07/28/2005
| | | | |
|
Title:
|
SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/29/2008
|
Application #:
|
10712351
|
Filing Dt:
|
11/13/2003
|
|
Publication #:
|
|
Pub Dt:
|
05/19/2005
| | | | |
|
Title:
|
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/10/2006
|
Application #:
|
10714307
|
Filing Dt:
|
11/14/2003
|
|
Publication #:
|
|
Pub Dt:
|
05/19/2005
| | | | |
|
Title:
|
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/21/2005
|
Application #:
|
10799140
|
Filing Dt:
|
03/12/2004
|
|
Publication #:
|
|
Pub Dt:
|
09/02/2004
| | | | |
|
Title:
|
LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/24/2006
|
Application #:
|
11067543
|
Filing Dt:
|
02/25/2005
|
|
Publication #:
|
|
Pub Dt:
|
03/30/2006
| | | | |
|
Title:
|
METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/13/2009
|
Application #:
|
11093586
|
Filing Dt:
|
03/30/2005
|
|
Publication #:
|
|
Pub Dt:
|
10/12/2006
| | | | |
|
Title:
|
METHODS OF FABRICATING SILICON NITRIDE REGIONS IN SILICON CARBIDE AND RESULTING STRUCTURES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/29/2008
|
Application #:
|
11149664
|
Filing Dt:
|
06/10/2005
|
|
Publication #:
|
|
Pub Dt:
|
12/14/2006
| | | | |
|
Title:
|
HIGHLY UNIFORM GROUP III NITRIDE EPITAXIAL LAYERS ON 100 MILLIMETER DIAMETER SILICON CARBIDE SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/28/2009
|
Application #:
|
11169378
|
Filing Dt:
|
06/29/2005
|
|
Publication #:
|
|
Pub Dt:
|
01/04/2007
| | | | |
|
Title:
|
PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/03/2016
|
Application #:
|
11169471
|
Filing Dt:
|
06/29/2005
|
|
Publication #:
|
|
Pub Dt:
|
01/04/2007
| | | | |
|
Title:
|
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/03/2010
|
Application #:
|
11185106
|
Filing Dt:
|
07/20/2005
|
|
Publication #:
|
|
Pub Dt:
|
01/25/2007
| | | | |
|
Title:
|
SEMICONDUCTOR DEVICE COMPRISING A JUNCTION HAVING A PLURALITY OF RINGS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/15/2013
|
Application #:
|
11211122
|
Filing Dt:
|
08/24/2005
|
|
Title:
|
INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS, AND METHOD OF MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/19/2008
|
Application #:
|
11243768
|
Filing Dt:
|
10/05/2005
|
|
Publication #:
|
|
Pub Dt:
|
02/16/2006
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/12/2011
|
Application #:
|
11276959
|
Filing Dt:
|
03/18/2006
|
|
Title:
|
DISTRIBUTED FUNCTIONALITY IN A WIRELESS COMMUNICATIONS NETWORK
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/06/2009
|
Application #:
|
11328550
|
Filing Dt:
|
01/10/2006
|
|
Publication #:
|
|
Pub Dt:
|
01/04/2007
| | | | |
|
Title:
|
ENVIRONMENTALLY ROBUST PASSIVATION STRUCTURES FOR HIGH-VOLTAGE SILICON CARBIDE SEMICONDUCTOR DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/25/2009
|
Application #:
|
11347953
|
Filing Dt:
|
02/06/2006
|
|
Publication #:
|
|
Pub Dt:
|
06/29/2006
| | | | |
|
Title:
|
SILICON CARBIDE LAYER ON DIAMOND SUBSTRATE FOR SUPPORTING GROUP III NITRIDE HETEROSTRUCTURE DEVICE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/24/2008
|
Application #:
|
11431990
|
Filing Dt:
|
05/11/2006
|
|
Publication #:
|
|
Pub Dt:
|
10/12/2006
| | | | |
|
Title:
|
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
06/01/2010
|
Application #:
|
11444106
|
Filing Dt:
|
05/31/2006
|
|
Publication #:
|
|
Pub Dt:
|
12/06/2007
| | | | |
|
Title:
|
SEMICONDUCTOR DEVICE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/13/2010
|
Application #:
|
11462016
|
Filing Dt:
|
08/02/2006
|
|
Publication #:
|
|
Pub Dt:
|
01/25/2007
| | | | |
|
Title:
|
REDUCED LEAKAGE POWER DEVICES BY INVERSION LAYER SURFACE PASSIVATION
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/22/2011
|
Application #:
|
11551286
|
Filing Dt:
|
10/20/2006
|
|
Publication #:
|
|
Pub Dt:
|
04/23/2009
| | | | |
|
Title:
|
METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/04/2014
|
Application #:
|
11651528
|
Filing Dt:
|
01/10/2007
|
|
Publication #:
|
|
Pub Dt:
|
08/30/2007
| | | | |
|
Title:
|
SILICON CARBIDE DIMPLED SUBSTRATE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
11/16/2010
|
Application #:
|
11661962
|
Filing Dt:
|
03/01/2007
|
|
Publication #:
|
|
Pub Dt:
|
11/15/2007
| | | | |
|
Title:
|
LATERAL FIELD EFFECT TRANSISTOR AND ITS FABRICATION COMPRISING A SPACER LAYER ABOVE AND BELOW THE CHANNEL LAYER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/26/2013
|
Application #:
|
11673117
|
Filing Dt:
|
02/09/2007
|
|
Publication #:
|
|
Pub Dt:
|
08/14/2008
| | | | |
|
Title:
|
SCHOTTKY DIODE STRUCTURE WITH SILICON MESA AND JUNCTION BARRIER SCHOTTKY WELLS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/29/2009
|
Application #:
|
11685761
|
Filing Dt:
|
03/13/2007
|
|
Publication #:
|
|
Pub Dt:
|
09/18/2008
| | | | |
|
Title:
|
GRADED DIELECTRIC LAYER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/08/2009
|
Application #:
|
11711703
|
Filing Dt:
|
02/28/2007
|
|
Publication #:
|
|
Pub Dt:
|
08/28/2008
| | | | |
|
Title:
|
SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/07/2013
|
Application #:
|
11753483
|
Filing Dt:
|
05/24/2007
|
|
Publication #:
|
|
Pub Dt:
|
11/27/2008
| | | | |
|
Title:
|
MICROSCALE OPTOELECTRONIC DEVICE PACKAGES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/21/2010
|
Application #:
|
11845805
|
Filing Dt:
|
08/28/2007
|
|
Publication #:
|
|
Pub Dt:
|
02/14/2008
| | | | |
|
Title:
|
PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/25/2011
|
Application #:
|
11846605
|
Filing Dt:
|
08/29/2007
|
|
Publication #:
|
|
Pub Dt:
|
03/05/2009
| | | | |
|
Title:
|
HIGH TEMPERATURE ION IMPLANTATION OF NITRIDE BASED HEMTS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/16/2013
|
Application #:
|
11855595
|
Filing Dt:
|
09/14/2007
|
|
Publication #:
|
|
Pub Dt:
|
03/19/2009
| | | | |
|
Title:
|
GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/01/2011
|
Application #:
|
11856222
|
Filing Dt:
|
09/17/2007
|
|
Publication #:
|
|
Pub Dt:
|
01/03/2008
| | | | |
|
Title:
|
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/27/2011
|
Application #:
|
11949221
|
Filing Dt:
|
12/03/2007
|
|
Publication #:
|
|
Pub Dt:
|
06/04/2009
| | | | |
|
Title:
|
SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/02/2011
|
Application #:
|
11952447
|
Filing Dt:
|
12/07/2007
|
|
Publication #:
|
|
Pub Dt:
|
06/11/2009
| | | | |
|
Title:
|
TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/05/2015
|
Application #:
|
11956366
|
Filing Dt:
|
12/14/2007
|
|
Publication #:
|
|
Pub Dt:
|
05/30/2013
| | | | |
|
Title:
|
Metallization structure for high power microelectronic devices
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/14/2010
|
Application #:
|
12019690
|
Filing Dt:
|
01/25/2008
|
|
Publication #:
|
|
Pub Dt:
|
07/30/2009
| | | | |
|
Title:
|
SEMICONDUCTOR TRANSISTOR WITH P TYPE RE-GROWN CHANNEL LAYER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/25/2011
|
Application #:
|
12020731
|
Filing Dt:
|
01/28/2008
|
|
Publication #:
|
|
Pub Dt:
|
05/22/2008
| | | | |
|
Title:
|
SILICON-RICH NICKEL-SILICIDE OHMIC CONTACTS FOR SIC SEMICONDUCTOR DEVICES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/05/2011
|
Application #:
|
12026552
|
Filing Dt:
|
02/05/2008
|
|
Publication #:
|
|
Pub Dt:
|
05/29/2008
| | | | |
|
Title:
|
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
09/14/2010
|
Application #:
|
12030198
|
Filing Dt:
|
02/12/2008
|
|
Publication #:
|
|
Pub Dt:
|
06/05/2008
| | | | |
|
Title:
|
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/20/2010
|
Application #:
|
12102275
|
Filing Dt:
|
04/14/2008
|
|
Publication #:
|
|
Pub Dt:
|
08/21/2008
| | | | |
|
Title:
|
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
02/16/2010
|
Application #:
|
12118947
|
Filing Dt:
|
05/12/2008
|
|
Publication #:
|
|
Pub Dt:
|
12/11/2008
| | | | |
|
Title:
|
HIGHLY UNIFORM GROUP III NITRIDE EPITAXIAL LAYERS ON 100 MILLIMETER DIAMETER SILICON CARBIDE SUBSTRATES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
07/31/2012
|
Application #:
|
12124341
|
Filing Dt:
|
05/21/2008
|
|
Publication #:
|
|
Pub Dt:
|
11/26/2009
| | | | |
|
Title:
|
JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
12/28/2010
|
Application #:
|
12404557
|
Filing Dt:
|
03/16/2009
|
|
Publication #:
|
|
Pub Dt:
|
08/27/2009
| | | | |
|
Title:
|
PASSIVATION OF WIDE BAND-GAP BASED SEMICONDUCTOR DEVICES WITH HYDROGEN-FREE SPUTTERED NITRIDES
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/04/2011
|
Application #:
|
12504725
|
Filing Dt:
|
07/17/2009
|
|
Publication #:
|
|
Pub Dt:
|
11/05/2009
| | | | |
|
Title:
|
SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/09/2011
|
Application #:
|
12603603
|
Filing Dt:
|
10/22/2009
|
|
Publication #:
|
|
Pub Dt:
|
02/18/2010
| | | | |
|
Title:
|
METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/29/2011
|
Application #:
|
12698144
|
Filing Dt:
|
02/02/2010
|
|
Publication #:
|
|
Pub Dt:
|
11/18/2010
| | | | |
|
Title:
|
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/25/2011
|
Application #:
|
12713514
|
Filing Dt:
|
02/26/2010
|
|
Publication #:
|
|
Pub Dt:
|
06/17/2010
| | | | |
|
Title:
|
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/25/2015
|
Application #:
|
12719412
|
Filing Dt:
|
03/08/2010
|
|
Publication #:
|
|
Pub Dt:
|
09/08/2011
| | | | |
|
Title:
|
SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHODS OF FABRICATING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
10/08/2013
|
Application #:
|
12840583
|
Filing Dt:
|
07/21/2010
|
|
Publication #:
|
|
Pub Dt:
|
01/26/2012
| | | | |
|
Title:
|
ELECTRONIC DEVICE STRUCTURE INCLUDING A BUFFER LAYER ON A BASE LAYER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/19/2014
|
Application #:
|
12843113
|
Filing Dt:
|
07/26/2010
|
|
Publication #:
|
|
Pub Dt:
|
01/26/2012
| | | | |
|
Title:
|
ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SURFACE PASSIVATION
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/26/2014
|
Application #:
|
12850098
|
Filing Dt:
|
08/04/2010
|
|
Publication #:
|
|
Pub Dt:
|
02/09/2012
| | | | |
|
Title:
|
CIRCUIT BREAKER
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/08/2012
|
Application #:
|
12852223
|
Filing Dt:
|
08/06/2010
|
|
Publication #:
|
|
Pub Dt:
|
12/02/2010
| | | | |
|
Title:
|
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/28/2017
|
Application #:
|
12943517
|
Filing Dt:
|
11/10/2010
|
|
Publication #:
|
|
Pub Dt:
|
05/10/2012
| | | | |
|
Title:
|
CONTACT PAD
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
08/20/2013
|
Application #:
|
12952278
|
Filing Dt:
|
11/23/2010
|
|
Publication #:
|
|
Pub Dt:
|
03/17/2011
| | | | |
|
Title:
|
WAFER PRECURSOR PREPARED FOR GROUP III NITRIDE EPITAXIAL GROWTH ON A COMPOSITE SUBSTRATE HAVING DIAMOND AND SILICON CARBIDE LAYERS, AND SEMICONDUCTOR LASER FORMED THEREON
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
05/20/2014
|
Application #:
|
13008008
|
Filing Dt:
|
01/17/2011
|
|
Publication #:
|
|
Pub Dt:
|
06/16/2011
| | | | |
|
Title:
|
LOW DISLOCATION DENSITY III-V NITRIDE SUBSTRATE INCLUDING FILLED PITS AND PROCESS FOR MAKING THE SAME
|
|
