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Reel/Frame:	058547/0853			Pages:	4
		Recorded:	01/05/2022
Attorney Dkt #:	AS873
Conveyance:	ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).

Total properties: 18

Patent #:	6977397	Issue Dt:	12/20/2005	Application #:	10452158	Filing Dt:	05/30/2003
Publication #:	US20040007708	Pub Dt:	01/15/2004
Title:	LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME

Patent #:	8125001	Issue Dt:	02/28/2012	Application #:	12620061	Filing Dt:	11/17/2009
Publication #:	US20100123167	Pub Dt:	05/20/2010
Title:	METHOD FOR MANUFACTURING GALLIUM OXIDE BASED SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DEVICE

Patent #:	8115230	Issue Dt:	02/14/2012	Application #:	12940718	Filing Dt:	11/05/2010
Publication #:	US20110147771	Pub Dt:	06/23/2011
Title:	LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM

Patent #:	8349743	Issue Dt:	01/08/2013	Application #:	13349387	Filing Dt:	01/12/2012
Publication #:	US20120115267	Pub Dt:	05/10/2012
Title:	METHOD FOR FABRICATING LIGHT EMITTING DEVICE

Patent #:	9059077	Issue Dt:	06/16/2015	Application #:	14351535	Filing Dt:	04/11/2014
Publication #:	US20140231830	Pub Dt:	08/21/2014
Title:	CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT

Patent #:	9926647	Issue Dt:	03/27/2018	Application #:	14351817	Filing Dt:	04/14/2014
Publication #:	US20140230723	Pub Dt:	08/21/2014
Title:	METHOD FOR PRODUCING B-GA2O3 SUBSTRATE AND METHOD FOR PRODUCING CRYSTAL LAMINATE STRUCTURE INCLUDING CUTTING OUT B-GA2O3 BASED SUBSTRATE FROM B-GA2O3 BASED CRYSTAL

Patent #:	9926646	Issue Dt:	03/27/2018	Application #:	14441376	Filing Dt:	05/07/2015
Publication #:	US20150308012	Pub Dt:	10/29/2015
Title:	METHOD FOR GROWING B-Ga2O3-BASED SINGLE CRYSTAL

Patent #:	9349915	Issue Dt:	05/24/2016	Application #:	14633106	Filing Dt:	02/26/2015
Publication #:	US20150249185	Pub Dt:	09/03/2015
Title:	Beta-Ga2O3-Based Single Crystal Substrate

Patent #:	9431489	Issue Dt:	08/30/2016	Application #:	14634407	Filing Dt:	02/27/2015
Publication #:	US20150380501	Pub Dt:	12/31/2015
Title:	ß-GA2O3-BASED SINGLE CRYSTAL SUBSTRATE

Patent #:	10526721	Issue Dt:	01/07/2020	Application #:	14782039	Filing Dt:	10/02/2015
Publication #:	US20160032485	Pub Dt:	02/04/2016
Title:	METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL

Patent #:	9915009	Issue Dt:	03/13/2018	Application #:	14890723	Filing Dt:	11/12/2015
Publication #:	US20160122899	Pub Dt:	05/05/2016
Title:	METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL, AND BETA-GA2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

Patent #:	9915010	Issue Dt:	03/13/2018	Application #:	14891513	Filing Dt:	11/16/2015
Publication #:	US20160115621	Pub Dt:	04/28/2016
Title:	METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL, AND BETA-Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME

Patent #:	10196756	Issue Dt:	02/05/2019	Application #:	15322848	Filing Dt:	12/29/2016
Publication #:	US20170152610	Pub Dt:	06/01/2017
Title:	BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE

Patent #:	10836961	Issue Dt:	11/17/2020	Application #:	15724357	Filing Dt:	10/04/2017
Publication #:	US20180044588	Pub Dt:	02/15/2018
Title:	PHOSPHOR, METHOD FOR MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE

Assignor

Exec Dt:

12/23/2021

Assignee

1-19-43, HIGASHI-OIZUMI, NERIMA-KU,

TOKYO, JAPAN 178-8511

Correspondence name and address
	JCIPRNET
	8F-1, NO. 100, ROOSEVELT RD. SEC. 2,
	TAIPEI, 100404 TAIWAN

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