Patent Assignment Details
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| Reel/Frame: | 059672/0561 | |
| Pages: | 3 |
| | Recorded: | 04/22/2022 | | |
| Attorney Dkt #: | 4592-113A |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/12/2023
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Application #:
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17726536
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Filing Dt:
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04/22/2022
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Publication #:
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Pub Dt:
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08/04/2022
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Title:
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METHOD OF MANUFACTURING MOSFET HAVING A SEMICONDUCTOR BASE SUBSTRATE WITH A SUPER JUNCTION STRUCTURE
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Assignee
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| 2-1, OHTEMACHI 2-CHOME, CHIYODA-KU, |
| TOKYO, JAPAN 100-0004 |
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Correspondence name and address
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HAUPTMAN HAM, LLP
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2318 MILL ROAD
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SUITE 1400
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ALEXANDRIA, VA 22314
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