Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 060126/0567 | |
| Pages: | 8 |
| | Recorded: | 06/07/2022 | | |
| Attorney Dkt #: | 38780.04040 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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17633096
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Filing Dt:
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02/04/2022
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Publication #:
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Pub Dt:
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10/20/2022
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Title:
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SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED BY GROWING SAID SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SiC WAFER PRODUCED FROM SAID SiC INGOT AND SiC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SiC WAFER AND SAID SiC WAFER WITH EPITAXIAL FILM
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Assignees
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| 1-155, UEGAHARA-ICHIBAN-CHO |
| NISHINOMIYA-SHI |
| HYOGO, JAPAN 6628501 |
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| 9-8, MEIEKI 4-CHOME |
| NAKAMURA-KU |
| NAGOYA, JAPAN 4508575 |
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Correspondence name and address
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YIZHOU LIU
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CALFEE, HALTER & GRISWOLD LLP
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1405 EAST SIXTH STREET
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CLEVELAND, OH 44114-1607
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05/03/2024 11:36 PM
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