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Reel/Frame:060232/0676   Pages: 5
Recorded: 06/16/2022
Attorney Dkt #:T5057-Y585D
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
02/06/2024
Application #:
17842718
Filing Dt:
06/16/2022
Publication #:
Pub Dt:
10/06/2022
Title:
METHOD OF MAKING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
Assignors
1
Exec Dt:
10/18/2011
2
Exec Dt:
10/18/2011
3
Exec Dt:
10/18/2011
4
Exec Dt:
10/18/2011
5
Exec Dt:
10/18/2011
6
Exec Dt:
10/18/2011
7
Exec Dt:
10/18/2011
8
Exec Dt:
03/22/2012
9
Exec Dt:
03/16/2012
10
Exec Dt:
03/26/2012
Assignee
1
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
HAUPTMAN HAM, LLP (TSMC)
2318 MILL ROAD
SUITE 1400
ALEXANDRIA, VA 22314

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