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Reel/Frame:063950/0081   Pages: 8
Recorded: 06/14/2023
Attorney Dkt #:28744-5481 (130129.11)
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
18334736
Filing Dt:
06/14/2023
Publication #:
Pub Dt:
10/12/2023
Title:
NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE
Assignors
1
Exec Dt:
07/30/2015
2
Exec Dt:
07/30/2015
3
Exec Dt:
07/31/2015
4
Exec Dt:
07/31/2015
Assignee
1
9 BATTERY ROAD, #15-01
STRAITS TRADING BUILDING
SINGAPORE, SINGAPORE 049910
Correspondence name and address
PATENT DOCKETING DEPT - ARMSTRONG TEASDALE LLP
7700 FORSYTH BOULEVARD
SUITE 1800
ST. LOUIS, MO 63105

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