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Reel/Frame:064068/0218   Pages: 3
Recorded: 06/27/2023
Attorney Dkt #:TSMC/P20204061US01
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
18214558
Filing Dt:
06/27/2023
Publication #:
Pub Dt:
12/07/2023
Title:
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES USING A SELF-ALIGNED MASK AND SEMICONDUCTOR DEVICES FABRICATED THEREOF
Assignors
1
Exec Dt:
05/04/2021
2
Exec Dt:
05/07/2021
3
Exec Dt:
05/04/2021
Assignee
1
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
NZ CARR LAW OFFICE
2101 CITYWEST BLVD. STE 100
HOUSTON, TX 77042

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