Total properties:
33
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Patent #:
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Issue Dt:
|
10/27/2009
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Application #:
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11405368
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Filing Dt:
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04/17/2006
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Publication #:
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Pub Dt:
|
11/02/2006
| | | | |
Title:
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METHOD OF AND SYSTEM FOR FORMING SIC CRYSTALS HAVING SPATIALLY UNIFORM DOPING IMPURITIES
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Patent #:
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Issue Dt:
|
10/14/2014
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Application #:
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11784971
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Filing Dt:
|
04/10/2007
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Title:
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Silicon carbide with low nitrogen content and method for preparation
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Patent #:
|
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Issue Dt:
|
01/29/2013
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Application #:
|
11900242
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Filing Dt:
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09/11/2007
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Publication #:
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Pub Dt:
|
03/27/2008
| | | | |
Title:
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SILICON CARBIDE SINGLE CRYSTALS WITH LOW BORON CONTENT
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Patent #:
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Issue Dt:
|
04/28/2015
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Application #:
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12067258
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Filing Dt:
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08/20/2008
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Publication #:
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Pub Dt:
|
07/02/2009
| | | | |
Title:
|
Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth
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Patent #:
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|
Issue Dt:
|
11/20/2012
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Application #:
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12522549
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Filing Dt:
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11/10/2009
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Publication #:
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Pub Dt:
|
03/11/2010
| | | | |
Title:
|
GUIDED DIAMETER SIC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE
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Patent #:
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Issue Dt:
|
07/10/2012
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Application #:
|
12573288
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Filing Dt:
|
10/05/2009
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Publication #:
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Pub Dt:
|
01/28/2010
| | | | |
Title:
|
SYSTEM FOR FORMING SIC CRYSTALS HAVING SPATIALLY UNIFORM DOPING IMPURITIES
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|
|
Patent #:
|
|
Issue Dt:
|
01/05/2016
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Application #:
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12632906
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Filing Dt:
|
12/08/2009
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Publication #:
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Pub Dt:
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06/10/2010
| | | | |
Title:
|
Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating
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Patent #:
|
|
Issue Dt:
|
05/21/2019
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Application #:
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13255151
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Filing Dt:
|
01/19/2012
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Publication #:
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Pub Dt:
|
05/03/2012
| | | | |
Title:
|
SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS
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|
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Patent #:
|
|
Issue Dt:
|
08/20/2013
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Application #:
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13471866
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Filing Dt:
|
05/15/2012
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Publication #:
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Pub Dt:
|
09/06/2012
| | | | |
Title:
|
HALOSILANE ASSISTED PVT GROWTH OF SIC
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|
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Patent #:
|
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Issue Dt:
|
06/03/2014
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Application #:
|
13867198
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Filing Dt:
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04/22/2013
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Publication #:
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Pub Dt:
|
10/24/2013
| | | | |
Title:
|
LARGE DIAMETER, HIGH QUALITY SIC SINGLE CRYSTALS, METHOD AND APPARATUS
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|
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Patent #:
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|
Issue Dt:
|
07/28/2015
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Application #:
|
13902016
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Filing Dt:
|
05/24/2013
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Publication #:
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Pub Dt:
|
12/05/2013
| | | | |
Title:
|
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof
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|
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Patent #:
|
|
Issue Dt:
|
07/12/2016
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Application #:
|
13951808
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Filing Dt:
|
07/26/2013
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Publication #:
|
|
Pub Dt:
|
11/21/2013
| | | | |
Title:
|
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
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|
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Patent #:
|
|
Issue Dt:
|
04/26/2016
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Application #:
|
14064604
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Filing Dt:
|
10/28/2013
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Publication #:
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|
Pub Dt:
|
08/21/2014
| | | | |
Title:
|
VANADIUM DOPED SIC SINGLE CRYSTALS AND METHOD THEREOF
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|
|
Patent #:
|
|
Issue Dt:
|
02/28/2017
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Application #:
|
14475803
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Filing Dt:
|
09/03/2014
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Publication #:
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|
Pub Dt:
|
03/03/2016
| | | | |
Title:
|
Method for Silicon Carbide Crystal Growth by Reacting Elemental Silicon Vapor With a Porous Carbon Solid Source Material
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|
|
Patent #:
|
|
Issue Dt:
|
02/21/2017
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Application #:
|
14506963
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Filing Dt:
|
10/06/2014
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Title:
|
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
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|
|
Patent #:
|
|
Issue Dt:
|
01/05/2021
|
Application #:
|
15583538
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Filing Dt:
|
05/01/2017
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Title:
|
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof
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|
|
Patent #:
|
|
Issue Dt:
|
10/06/2020
|
Application #:
|
16031917
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Filing Dt:
|
07/10/2018
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Title:
|
HIGH QUALITY SILICON CARBIDE CRYSTALS AND METHOD OF MAKING THE SAME
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|
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Patent #:
|
|
Issue Dt:
|
10/19/2021
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Application #:
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16368977
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Filing Dt:
|
03/29/2019
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Publication #:
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|
Pub Dt:
|
08/15/2019
| | | | |
Title:
|
SiC Single Crystal Sublimation Growth Apparatus
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|
|
Patent #:
|
|
Issue Dt:
|
06/15/2021
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Application #:
|
16458385
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Filing Dt:
|
07/01/2019
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Publication #:
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Pub Dt:
|
10/24/2019
| | | | |
Title:
|
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
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|
|
Patent #:
|
|
Issue Dt:
|
03/15/2022
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Application #:
|
16647067
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Filing Dt:
|
03/13/2020
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Publication #:
|
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Pub Dt:
|
07/30/2020
| | | | |
Title:
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A CONCEPT FOR SILICON CARBIDE POWER DEVICES
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|
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Patent #:
|
|
Issue Dt:
|
05/24/2022
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Application #:
|
16647094
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Filing Dt:
|
03/13/2020
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Publication #:
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Pub Dt:
|
07/09/2020
| | | | |
Title:
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A METHOD FOR MANUFACTURING A GRID
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|
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Patent #:
|
|
Issue Dt:
|
09/07/2021
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Application #:
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16647186
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Filing Dt:
|
03/13/2020
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Publication #:
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Pub Dt:
|
04/29/2021
| | | | |
Title:
|
INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET
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|
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Patent #:
|
|
Issue Dt:
|
10/26/2021
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Application #:
|
16647202
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Filing Dt:
|
03/13/2020
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Publication #:
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Pub Dt:
|
08/20/2020
| | | | |
Title:
|
FEEDER DESIGN WITH HIGH CURRENT CAPABILITY
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|
|
Patent #:
|
NONE
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Issue Dt:
|
|
Application #:
|
17029746
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Filing Dt:
|
09/23/2020
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Publication #:
|
|
Pub Dt:
|
09/02/2021
| | | | |
Title:
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METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY PROVIDING A COMPOUND INCLUDING ALUMINUM AND OXYGEN IN A CAPSULE COMPRISED OF A FIRST AND SECOND MATERIAL
|
|
|
Patent #:
|
|
Issue Dt:
|
04/11/2023
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Application #:
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17055686
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Filing Dt:
|
11/16/2020
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Publication #:
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Pub Dt:
|
07/01/2021
| | | | |
Title:
|
BURIED GRID WITH SHIELD IN WIDE BAND GAP MATERIAL
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|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
17249395
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Filing Dt:
|
03/01/2021
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Publication #:
|
|
Pub Dt:
|
09/02/2021
| | | | |
Title:
|
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
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|
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Patent #:
|
|
Issue Dt:
|
02/20/2024
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Application #:
|
17249597
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Filing Dt:
|
03/05/2021
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Publication #:
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Pub Dt:
|
06/24/2021
| | | | |
Title:
|
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF
|
|
|
Patent #:
|
|
Issue Dt:
|
02/14/2023
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Application #:
|
17444817
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Filing Dt:
|
08/10/2021
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Publication #:
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|
Pub Dt:
|
01/27/2022
| | | | |
Title:
|
INTEGRATION OF A SCHOTTKY DIODE WITH A MOSFET
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
17444863
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Filing Dt:
|
08/11/2021
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Publication #:
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Pub Dt:
|
02/17/2022
| | | | |
Title:
|
SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE
|
|
|
Patent #:
|
|
Issue Dt:
|
09/19/2023
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Application #:
|
17447742
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Filing Dt:
|
09/15/2021
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Publication #:
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|
Pub Dt:
|
01/06/2022
| | | | |
Title:
|
SiC Single Crystal Sublimation Growth Apparatus
|
|
|
Patent #:
|
|
Issue Dt:
|
02/07/2023
|
Application #:
|
17448790
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Filing Dt:
|
09/24/2021
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Publication #:
|
|
Pub Dt:
|
01/20/2022
| | | | |
Title:
|
FEEDER DESIGN WITH HIGH CURRENT CAPABILITY
|
|
|
Patent #:
|
|
Issue Dt:
|
05/16/2023
|
Application #:
|
17577226
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Filing Dt:
|
01/17/2022
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Publication #:
|
|
Pub Dt:
|
05/05/2022
| | | | |
Title:
|
CONCEPT FOR SILICON FOR CARBIDE POWER DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
01/16/2024
|
Application #:
|
17660888
|
Filing Dt:
|
04/27/2022
|
Publication #:
|
|
Pub Dt:
|
08/11/2022
| | | | |
Title:
|
METHOD FOR MANUFACTURING A GRID
|
|