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Reel/Frame:067343/0009   Pages: 4
Recorded: 05/08/2024
Attorney Dkt #:2019-1554/24061.4026US02
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
06/11/2024
Application #:
17870292
Filing Dt:
07/21/2022
Publication #:
Pub Dt:
11/10/2022
Title:
Multi-Gate Devices having a Semiconductor Layer between an Inner Spacer and an Epitaxial Feature
Assignors
1
Exec Dt:
04/06/2021
2
Exec Dt:
04/06/2021
3
Exec Dt:
05/02/2021
4
Exec Dt:
04/06/2021
Assignee
1
8, LI-HSIN RD. 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
DAVID M. O'DELL
2801 N. HARWOOD STREET
SUITE 2300
DALLAS, TX 75201

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