Total properties:
60
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13079710
|
Filing Dt:
|
04/04/2011
|
Publication #:
|
|
Pub Dt:
|
10/04/2012
| | | | |
Title:
|
Controlled Doping in III-V Materials
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13180758
|
Filing Dt:
|
07/12/2011
|
Publication #:
|
|
Pub Dt:
|
01/17/2013
| | | | |
Title:
|
Electrical Isolation Of High Defect Density Regions In A Semiconductor Device
|
|
|
Patent #:
|
|
Issue Dt:
|
11/10/2015
|
Application #:
|
13198655
|
Filing Dt:
|
08/04/2011
|
Publication #:
|
|
Pub Dt:
|
02/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE
|
|
|
Patent #:
|
|
Issue Dt:
|
03/03/2015
|
Application #:
|
13198659
|
Filing Dt:
|
08/04/2011
|
Publication #:
|
|
Pub Dt:
|
02/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
|
|
|
Patent #:
|
|
Issue Dt:
|
02/03/2015
|
Application #:
|
13198661
|
Filing Dt:
|
08/04/2011
|
Publication #:
|
|
Pub Dt:
|
02/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
09/15/2015
|
Application #:
|
13198666
|
Filing Dt:
|
08/04/2011
|
Publication #:
|
|
Pub Dt:
|
02/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICS
|
|
|
Patent #:
|
|
Issue Dt:
|
07/28/2015
|
Application #:
|
13225345
|
Filing Dt:
|
09/02/2011
|
Publication #:
|
|
Pub Dt:
|
03/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICS
|
|
|
Patent #:
|
|
Issue Dt:
|
09/30/2014
|
Application #:
|
13240877
|
Filing Dt:
|
09/22/2011
|
Publication #:
|
|
Pub Dt:
|
03/28/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13267552
|
Filing Dt:
|
10/06/2011
|
Publication #:
|
|
Pub Dt:
|
04/11/2013
| | | | |
Title:
|
MONOLITHICALLY INTEGRATED HEMT AND SCHOTTKY DIODE
|
|
|
Patent #:
|
|
Issue Dt:
|
12/29/2015
|
Application #:
|
13270606
|
Filing Dt:
|
10/11/2011
|
Publication #:
|
|
Pub Dt:
|
04/11/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GALLIUM NITRIDE MATERIALS
|
|
|
Patent #:
|
|
Issue Dt:
|
07/15/2014
|
Application #:
|
13270625
|
Filing Dt:
|
10/11/2011
|
Publication #:
|
|
Pub Dt:
|
04/11/2013
| | | | |
Title:
|
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS) DIODE
|
|
|
Patent #:
|
|
Issue Dt:
|
01/13/2015
|
Application #:
|
13270641
|
Filing Dt:
|
10/11/2011
|
Publication #:
|
|
Pub Dt:
|
04/11/2013
| | | | |
Title:
|
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
|
|
|
Patent #:
|
|
Issue Dt:
|
08/06/2013
|
Application #:
|
13289219
|
Filing Dt:
|
11/04/2011
|
Publication #:
|
|
Pub Dt:
|
05/09/2013
| | | | |
Title:
|
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
|
|
|
Patent #:
|
|
Issue Dt:
|
10/13/2015
|
Application #:
|
13299227
|
Filing Dt:
|
11/17/2011
|
Publication #:
|
|
Pub Dt:
|
05/23/2013
| | | | |
Title:
|
ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
06/10/2014
|
Application #:
|
13299254
|
Filing Dt:
|
11/17/2011
|
Publication #:
|
|
Pub Dt:
|
05/23/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATERIALS
|
|
|
Patent #:
|
|
Issue Dt:
|
09/16/2014
|
Application #:
|
13300009
|
Filing Dt:
|
11/18/2011
|
Publication #:
|
|
Pub Dt:
|
05/23/2013
| | | | |
Title:
|
GALLIUM NITRIDE-BASED SCHOTTKY BARRIER DIODE WITH ALUMINUM GALLIUM NITRIDE SURFACE LAYER
|
|
|
Patent #:
|
|
Issue Dt:
|
02/04/2014
|
Application #:
|
13300028
|
Filing Dt:
|
11/18/2011
|
Publication #:
|
|
Pub Dt:
|
05/23/2013
| | | | |
Title:
|
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
|
|
|
Patent #:
|
|
Issue Dt:
|
01/06/2015
|
Application #:
|
13301165
|
Filing Dt:
|
11/21/2011
|
Publication #:
|
|
Pub Dt:
|
05/23/2013
| | | | |
Title:
|
EDGE TERMINATION BY ION IMPLANTATION IN GAN
|
|
|
Patent #:
|
|
Issue Dt:
|
10/29/2013
|
Application #:
|
13307108
|
Filing Dt:
|
11/30/2011
|
Publication #:
|
|
Pub Dt:
|
05/30/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13312055
|
Filing Dt:
|
12/06/2011
|
Publication #:
|
|
Pub Dt:
|
06/06/2013
| | | | |
Title:
|
IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
10/15/2013
|
Application #:
|
13315705
|
Filing Dt:
|
12/09/2011
|
Publication #:
|
|
Pub Dt:
|
06/13/2013
| | | | |
Title:
|
VERTICAL GAN-BASED METAL INSULATOR SEMICONDUCTOR FET
|
|
|
Patent #:
|
|
Issue Dt:
|
04/15/2014
|
Application #:
|
13315720
|
Filing Dt:
|
12/09/2011
|
Publication #:
|
|
Pub Dt:
|
06/13/2013
| | | | |
Title:
|
VERTICAL GAN JFET WITH GATE SOURCE ELECTRODES ON REGROWN GATE
|
|
|
Patent #:
|
|
Issue Dt:
|
04/14/2015
|
Application #:
|
13326192
|
Filing Dt:
|
12/14/2011
|
Publication #:
|
|
Pub Dt:
|
06/20/2013
| | | | |
Title:
|
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
09/09/2014
|
Application #:
|
13334514
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE AND GATE
|
|
|
Patent #:
|
|
Issue Dt:
|
05/06/2014
|
Application #:
|
13334742
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING CONDUCTIVITY MODULATION
|
|
|
Patent #:
|
|
Issue Dt:
|
09/02/2014
|
Application #:
|
13335329
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
|
|
|
Patent #:
|
|
Issue Dt:
|
11/26/2013
|
Application #:
|
13335355
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH
|
|
|
Patent #:
|
|
Issue Dt:
|
06/03/2014
|
Application #:
|
13335383
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR FABRICATING EDGE TERMINATION STRUCTURES IN GAN MATERIALS
|
|
|
Patent #:
|
|
Issue Dt:
|
10/21/2014
|
Application #:
|
13335572
|
Filing Dt:
|
12/22/2011
|
Publication #:
|
|
Pub Dt:
|
06/27/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GAN SELF-ALIGNED VERTICAL MESFET
|
|
|
Patent #:
|
|
Issue Dt:
|
08/25/2015
|
Application #:
|
13465812
|
Filing Dt:
|
05/07/2012
|
Publication #:
|
|
Pub Dt:
|
11/07/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
05/06/2014
|
Application #:
|
13468325
|
Filing Dt:
|
05/10/2012
|
Publication #:
|
|
Pub Dt:
|
11/14/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALIGNED GATE METALLIZATION
|
|
|
Patent #:
|
|
Issue Dt:
|
09/23/2014
|
Application #:
|
13468332
|
Filing Dt:
|
05/10/2012
|
Publication #:
|
|
Pub Dt:
|
11/14/2013
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE METALLIZATION
|
|
|
Patent #:
|
|
Issue Dt:
|
07/22/2014
|
Application #:
|
13529822
|
Filing Dt:
|
06/21/2012
|
Publication #:
|
|
Pub Dt:
|
12/26/2013
| | | | |
Title:
|
GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS
|
|
|
Patent #:
|
|
Issue Dt:
|
08/11/2015
|
Application #:
|
13552365
|
Filing Dt:
|
07/18/2012
|
Publication #:
|
|
Pub Dt:
|
01/23/2014
| | | | |
Title:
|
GAN POWER DEVICE WITH SOLDERABLE BACK METAL
|
|
|
Patent #:
|
|
Issue Dt:
|
09/01/2015
|
Application #:
|
13571743
|
Filing Dt:
|
08/10/2012
|
Publication #:
|
|
Pub Dt:
|
02/13/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
03/17/2015
|
Application #:
|
13572408
|
Filing Dt:
|
08/10/2012
|
Publication #:
|
|
Pub Dt:
|
02/13/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGINEERED SUBSTRATES
|
|
|
Patent #:
|
|
Issue Dt:
|
03/03/2015
|
Application #:
|
13585121
|
Filing Dt:
|
08/14/2012
|
Publication #:
|
|
Pub Dt:
|
02/20/2014
| | | | |
Title:
|
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS) DIODE BY REGROWTH AND ETCH BACK
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13586330
|
Filing Dt:
|
08/15/2012
|
Publication #:
|
|
Pub Dt:
|
02/20/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR EDGE TERMINATION IN GAN MATERIALS BY SELECTIVE AREA IMPLANTATION DOPING
|
|
|
Patent #:
|
|
Issue Dt:
|
12/23/2014
|
Application #:
|
13611467
|
Filing Dt:
|
09/12/2012
|
Publication #:
|
|
Pub Dt:
|
03/13/2014
| | | | |
Title:
|
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
03/03/2015
|
Application #:
|
13675694
|
Filing Dt:
|
11/13/2012
|
Publication #:
|
|
Pub Dt:
|
05/15/2014
| | | | |
Title:
|
VERTICAL GAN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOURCE CAPACITANCE
|
|
|
Patent #:
|
|
Issue Dt:
|
10/18/2016
|
Application #:
|
13675826
|
Filing Dt:
|
11/13/2012
|
Publication #:
|
|
Pub Dt:
|
05/15/2014
| | | | |
Title:
|
LATERAL GAN JFET WITH VERTICAL DRIFT REGION
|
|
|
Patent #:
|
|
Issue Dt:
|
09/02/2014
|
Application #:
|
13675916
|
Filing Dt:
|
11/13/2012
|
Publication #:
|
|
Pub Dt:
|
05/15/2014
| | | | |
Title:
|
GAN VERTICAL BIPOLAR TRANSISTOR
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13689574
|
Filing Dt:
|
11/29/2012
|
Publication #:
|
|
Pub Dt:
|
05/29/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE
|
|
|
Patent #:
|
|
Issue Dt:
|
07/21/2015
|
Application #:
|
13692717
|
Filing Dt:
|
12/03/2012
|
Publication #:
|
|
Pub Dt:
|
06/05/2014
| | | | |
Title:
|
AC-DC CONVERTER FOR WIDE RANGE OUTPUT VOLTAGE AND HIGH SWITCHING FREQUENCY
|
|
|
Patent #:
|
|
Issue Dt:
|
10/21/2014
|
Application #:
|
13721542
|
Filing Dt:
|
12/20/2012
|
Publication #:
|
|
Pub Dt:
|
06/26/2014
| | | | |
Title:
|
VERTICAL GAN POWER DEVICE WITH BREAKDOWN VOLTAGE CONTROL
|
|
|
Patent #:
|
|
Issue Dt:
|
01/20/2015
|
Application #:
|
13730619
|
Filing Dt:
|
12/28/2012
|
Publication #:
|
|
Pub Dt:
|
07/03/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13731872
|
Filing Dt:
|
12/31/2012
|
Publication #:
|
|
Pub Dt:
|
07/03/2014
| | | | |
Title:
|
HIGH POWER DENSITY OFF-LINE POWER SUPPLY
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
13735897
|
Filing Dt:
|
01/07/2013
|
Publication #:
|
|
Pub Dt:
|
07/10/2014
| | | | |
Title:
|
GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE
|
|
|
Patent #:
|
|
Issue Dt:
|
06/16/2015
|
Application #:
|
13735912
|
Filing Dt:
|
01/07/2013
|
Publication #:
|
|
Pub Dt:
|
07/10/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
|
|
|
Patent #:
|
|
Issue Dt:
|
10/13/2015
|
Application #:
|
13866286
|
Filing Dt:
|
04/19/2013
|
Publication #:
|
|
Pub Dt:
|
10/23/2014
| | | | |
Title:
|
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH REGROWN GALLIUM NITRIDE LAYER
|
|
|
Patent #:
|
|
Issue Dt:
|
04/26/2016
|
Application #:
|
13901546
|
Filing Dt:
|
05/23/2013
|
Publication #:
|
|
Pub Dt:
|
11/27/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR CO-PACKAGING VERTICAL GALLIUM NITRIDE POWER DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
07/28/2015
|
Application #:
|
13932290
|
Filing Dt:
|
07/01/2013
|
Publication #:
|
|
Pub Dt:
|
06/12/2014
| | | | |
Title:
|
ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
01/27/2015
|
Application #:
|
13935345
|
Filing Dt:
|
07/03/2013
|
Publication #:
|
|
Pub Dt:
|
06/12/2014
| | | | |
Title:
|
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
|
|
|
Patent #:
|
|
Issue Dt:
|
02/03/2015
|
Application #:
|
14045708
|
Filing Dt:
|
10/03/2013
|
Title:
|
METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS
|
|
|
Patent #:
|
|
Issue Dt:
|
10/07/2014
|
Application #:
|
14061741
|
Filing Dt:
|
10/23/2013
|
Publication #:
|
|
Pub Dt:
|
05/01/2014
| | | | |
Title:
|
METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
14062724
|
Filing Dt:
|
10/24/2013
|
Publication #:
|
|
Pub Dt:
|
02/20/2014
| | | | |
Title:
|
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
|
|
|
Patent #:
|
|
Issue Dt:
|
06/14/2016
|
Application #:
|
14071032
|
Filing Dt:
|
11/04/2013
|
Publication #:
|
|
Pub Dt:
|
05/07/2015
| | | | |
Title:
|
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
|
|
|
Patent #:
|
|
Issue Dt:
|
09/01/2015
|
Application #:
|
14077039
|
Filing Dt:
|
11/11/2013
|
Publication #:
|
|
Pub Dt:
|
05/14/2015
| | | | |
Title:
|
GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL
|
|
|
Patent #:
|
|
Issue Dt:
|
04/26/2016
|
Application #:
|
14083217
|
Filing Dt:
|
11/18/2013
|
Publication #:
|
|
Pub Dt:
|
05/21/2015
| | | | |
Title:
|
METHOD AND SYSTEM FOR INTERLEAVED BOOST CONVERTER WITH CO-PACKAGED GALLIUM NITRIDE POWER DEVICES
|
|
|
Patent #:
|
|
Issue Dt:
|
12/27/2016
|
Application #:
|
14095759
|
Filing Dt:
|
12/03/2013
|
Publication #:
|
|
Pub Dt:
|
06/04/2015
| | | | |
Title:
|
AC-DC CONVERTER WITH ADJUSTABLE OUTPUT
|
|