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Patent Assignment Details
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Reel/Frame:023574/0023   Pages: 25
Recorded: 11/27/2009
Attorney Dkt #:17388/55134
Conveyance: LICENSE (SEE DOCUMENT FOR DETAILS).
Total properties: 5
1
Patent #:
Issue Dt:
01/07/2003
Application #:
09796490
Filing Dt:
03/02/2001
Publication #:
Pub Dt:
09/05/2002
Title:
COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (>2EV) BANDGAP SEMICONDUCTORS
2
Patent #:
Issue Dt:
06/25/2002
Application #:
09825065
Filing Dt:
04/04/2001
Publication #:
Pub Dt:
06/20/2002
Title:
SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSISTOR; A NEW SEMICONDUCTOR TRANSISTOR FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
3
Patent #:
Issue Dt:
03/07/2006
Application #:
10033785
Filing Dt:
01/03/2002
Publication #:
Pub Dt:
10/17/2002
Title:
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI-INSULATING EPITAXY FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
4
Patent #:
Issue Dt:
07/27/2004
Application #:
10193108
Filing Dt:
07/12/2002
Publication #:
Pub Dt:
02/20/2003
Title:
SELF-ALIGNED TRANSISTOR AND DIODE TOPOLOGIES IN SILICON CARBIDE THROUGH THE USE OF SELECTIVE EPITAXY OR SELECTIVE IMPLANTATION
5
Patent #:
Issue Dt:
10/07/2008
Application #:
11305337
Filing Dt:
12/19/2005
Publication #:
Pub Dt:
07/20/2006
Title:
SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI-INSULATING EPITAXY FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
Assignor
1
Exec Dt:
06/26/2002
Assignee
1
201 RESEARCH BLVD.
STARKVILLE, MISSISSIPPI 39759
Correspondence name and address
CHRISTOPHER W. RAIMUND
1333 H STREET, N.W.
SUITE 820
WASHINGTON, DC 20005

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