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Reel/Frame:062323/0067   Pages: 4
Recorded: 01/09/2023
Attorney Dkt #:88340.1 ASSIGN-RAPIDUS
Conveyance: RECORDABLE PATENT ASSIGNMENT AND RESERVATION
Total properties: 9
1
Patent #:
Issue Dt:
05/21/2019
Application #:
15491565
Filing Dt:
04/19/2017
Publication #:
Pub Dt:
10/25/2018
Title:
GATE FILL UTILIZING REPLACEMENT SPACER
2
Patent #:
Issue Dt:
06/25/2019
Application #:
15730306
Filing Dt:
10/11/2017
Publication #:
Pub Dt:
04/11/2019
Title:
NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDATION
3
Patent #:
Issue Dt:
10/01/2019
Application #:
15967524
Filing Dt:
04/30/2018
Title:
NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE
4
Patent #:
Issue Dt:
08/11/2020
Application #:
16006173
Filing Dt:
06/12/2018
Publication #:
Pub Dt:
12/12/2019
Title:
NANOSHEET SINGLE GATE (SG) AND EXTRA GATE (EG) FIELD EFFECT TRANSISTOR (FET) CO-INTEGRATION
5
Patent #:
Issue Dt:
03/23/2021
Application #:
16253721
Filing Dt:
01/22/2019
Publication #:
Pub Dt:
05/23/2019
Title:
GATE FILL UTILIZING REPLACEMENT SPACER
6
Patent #:
Issue Dt:
09/01/2020
Application #:
16253824
Filing Dt:
01/22/2019
Publication #:
Pub Dt:
05/23/2019
Title:
--NANOSHEET MOSFET WITH GATE FILL UTILIZING REPLACEMENT SPACER--
7
Patent #:
Issue Dt:
04/07/2020
Application #:
16285758
Filing Dt:
02/26/2019
Publication #:
Pub Dt:
06/20/2019
Title:
NANOSHEET SEMICONDUCTOR STRUCTURE WITH INNER SPACER FORMED BY OXIDATION
8
Patent #:
Issue Dt:
11/03/2020
Application #:
16518100
Filing Dt:
07/22/2019
Title:
NANOSHEET WITH SELECTIVE DIPOLE DIFFUSION INTO HIGH-K
9
Patent #:
Issue Dt:
05/19/2020
Application #:
16545867
Filing Dt:
08/20/2019
Publication #:
Pub Dt:
01/02/2020
Title:
NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE
Assignor
1
Exec Dt:
12/16/2022
Assignee
1
4-1 KOJIMACHI, CHIYODA-KU
TOKYO, JAPAN 102-0083
Correspondence name and address
WINSTON & STRAWN LLP - KRISHNAN PADMANABHAN
200 PARK AVENUE
NEW YORK, NY 10166-4193

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