Patent Assignment Details
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| Reel/Frame: | 015522/0087 | |
| Pages: | 2 |
| | Recorded: | 06/28/2004 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/30/2010
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Application #:
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10876729
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Filing Dt:
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06/28/2004
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Publication #:
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Pub Dt:
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02/24/2005
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Title:
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A TRANSISTOR IN A SEMICONDUCTOR SUBSTRATE HAVING HIGH-CONCENTRATION SOURCE AND DRAIN REGION FORMED AT THE BOTTOM OF A TRENCH ADJACENT TO THE GATE ELECTRODE.
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Assignee
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| SAN 136-1, AMI-RI, BUBAL-UEP |
| ICHON-SHI, KYUNGKI-DO, KOREA, REPUBLIC OF 467-860 |
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Correspondence name and address
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JACOBSON HOLMAN PLLC
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YOON S. HAM
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400 SEVENTH STREET N.W.
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SUITE 600
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WASHINGTON, DC 20004
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