Patent Assignment Details
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| Reel/Frame: | 008409/0094 | |
| Pages: | 3 |
| | Recorded: | 02/28/1997 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/08/1998
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Application #:
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08807441
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Filing Dt:
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02/28/1997
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Title:
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METHOD FOR FORMING A DRAM CAPACITOR USING HSG-SI TECHNIQUE AND OXYGEN IMPLANT
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| 123, PARK AVENUE-3RD |
| HSINCHU, R.O.C., TAIWAN |
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Correspondence name and address
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CHRISTENSEN O'CONNOR JOHNSON & KINDNESS
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LAWRENCE E. LYCKE, ESQ.
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1420 FIFTH AVENUE, SUITE 2800
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SEATTLE, WASHINGTON 98101-2347
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