Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 026654/0146 | |
| Pages: | 4 |
| | Recorded: | 07/26/2011 | | |
| Attorney Dkt #: | 18664-1 |
| Conveyance: | RELEASE OF SECURITY INTEREST ON SEMISOUTH LICENSE AGREEMENT |
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Total properties:
5
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Patent #:
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Issue Dt:
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01/07/2003
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Application #:
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09796490
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Filing Dt:
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03/02/2001
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Publication #:
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Pub Dt:
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09/05/2002
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Title:
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COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (>2EV) BANDGAP SEMICONDUCTORS
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Patent #:
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Issue Dt:
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06/25/2002
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Application #:
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09825065
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Filing Dt:
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04/04/2001
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Publication #:
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Pub Dt:
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06/20/2002
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Title:
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SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSISTOR; A NEW SEMICONDUCTOR TRANSISTOR FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
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Patent #:
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Issue Dt:
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03/07/2006
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Application #:
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10033785
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Filing Dt:
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01/03/2002
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Publication #:
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Pub Dt:
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10/17/2002
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Title:
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SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI-INSULATING EPITAXY FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
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Patent #:
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Issue Dt:
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07/27/2004
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Application #:
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10193108
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Filing Dt:
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07/12/2002
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Publication #:
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Pub Dt:
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02/20/2003
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Title:
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SELF-ALIGNED TRANSISTOR AND DIODE TOPOLOGIES IN SILICON CARBIDE THROUGH THE USE OF SELECTIVE EPITAXY OR SELECTIVE IMPLANTATION
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Patent #:
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Issue Dt:
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10/07/2008
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Application #:
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11305337
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Filing Dt:
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12/19/2005
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Publication #:
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Pub Dt:
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07/20/2006
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Title:
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SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI-INSULATING EPITAXY FOR HIGH-SPEED, HIGH-POWER APPLICATIONS
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Assignee
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| ONE RESEARCH BLVD., SUITE 201B |
| STARKVILLE, MISSISSIPPI 39759 |
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Correspondence name and address
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CHELSEAA BUSH
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4 PARK PLAZA, SUITE 1600
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ORRICK, HERRINGTON & SUTCLIFFE LLP
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IRVINE, CA 92614-2558
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