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Reel/Frame:041994/0167   Pages: 3
Recorded: 04/13/2017
Attorney Dkt #:TC16080261US
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
15375139
Filing Dt:
12/11/2016
Publication #:
Pub Dt:
07/27/2017
Title:
METHOD OF FABRICATING PMOS DEVICES WITH EMBEDDED SIGE
Assignors
1
Exec Dt:
12/09/2016
2
Exec Dt:
12/09/2016
3
Exec Dt:
12/09/2016
Assignee
1
497 GAOSI ROAD, ZHANGJIANG HI-TECH PARK, PUDONG
SHANGHAI, CHINA 201210
Correspondence name and address
SHANGHAI IC R&D CENTER CO., LTD
497 GAOSI ROAD, ZHANGJIANG HI-TECH PARK, PUDONG
SHANGHAI, 201210 CHINA

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