Patent Assignment Details
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| Reel/Frame: | 010498/0171 | |
| Pages: | 3 |
| | Recorded: | 12/30/1999 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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07/31/2001
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Application #:
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09474846
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Filing Dt:
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12/30/1999
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Title:
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METHOD FOR FABRICATING AN OXIDE LAYER ON SILICON WITH CARBON IONS INTRODUCED AT THE SILICON/OXIDE INTERFACE IN ORDER TO REDUCE HOT CARRIER EFFECTS
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO.3 LI HSIN RD. II |
| HSINCHU, TAIWAN |
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Correspondence name and address
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HICKMAN STEPHENS COLEMAN & HUGHES, LLP
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ROBERT D. HAYDEN
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PO BOX 52037
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PALO ALTO, CA 94303-0746
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