Patent Assignment Details
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Reel/Frame: | 037758/0179 | |
| Pages: | 3 |
| | Recorded: | 02/17/2016 | | |
Attorney Dkt #: | OP-104000757 |
Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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12/13/2016
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Application #:
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15046294
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Filing Dt:
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02/17/2016
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Title:
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LOW-TEMPERATURE EPITAXIAL METHOD FOR MANUFACTURING BACKSIDE FIELD STOP LAYER OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT)
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Assignee
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1/F, SHELL INDUSTRIAL BUILDING, |
12 LEE CHUNG STREET, CHAI WAN, |
HONG KONG, HONG KONG |
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Correspondence name and address
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HDLS IPR SERVICES
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P.O. BOX 230970
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CENTREVILLE, VA 20120
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