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Reel/Frame:044805/0268   Pages: 4
Recorded: 02/01/2018
Attorney Dkt #:JCLA60196-D
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
03/10/2020
Application #:
15886717
Filing Dt:
02/01/2018
Publication #:
Pub Dt:
06/07/2018
Title:
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING HIGH VOLTAGE MOS DEVICE
Assignors
1
Exec Dt:
11/13/2015
2
Exec Dt:
11/13/2015
Assignee
1
NO. 3, LI-HSIN RD. II, SCIENCE-BASED INDUSTRIAL PARK
HSINCHU, TAIWAN
Correspondence name and address
J.C. PATENTS
4 VENTURE, SUITE 250
IRVINE, CA 92618

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