Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 053550/0309 | |
| Pages: | 6 |
| | Recorded: | 08/20/2020 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
6
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Patent #:
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Issue Dt:
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08/24/2004
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Application #:
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09981848
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Filing Dt:
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10/16/2001
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Publication #:
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Pub Dt:
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04/25/2002
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Title:
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CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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07/31/2007
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Application #:
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10601301
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Filing Dt:
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06/13/2003
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Publication #:
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Pub Dt:
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02/19/2004
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Title:
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PRODUCTION OF A GAN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GAN BULK CRYSTAL SUBSTRATE
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Patent #:
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Issue Dt:
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10/22/2013
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Application #:
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12139230
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Filing Dt:
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06/13/2008
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Publication #:
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Pub Dt:
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11/20/2008
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Title:
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CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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12/23/2014
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Application #:
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12745809
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Filing Dt:
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06/02/2010
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Publication #:
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Pub Dt:
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10/14/2010
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Title:
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GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR GROWING THE SAME
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Patent #:
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Issue Dt:
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01/21/2020
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Application #:
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15115154
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Filing Dt:
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07/28/2016
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Publication #:
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Pub Dt:
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12/01/2016
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Title:
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METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL
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Patent #:
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Issue Dt:
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06/18/2019
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Application #:
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15600937
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Filing Dt:
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05/22/2017
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Publication #:
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Pub Dt:
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11/30/2017
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Title:
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METHOD FOR PRODUCING CRYSTAL SUBSTRATE
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Assignees
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| 27-1, SHINKAWA 2-CHOME, CHUO-KU |
| TOKYO, JAPAN 104-8260 |
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| 880, ISAGOZAWA-CHO, HITACHI-SHI |
| IBARAKI-KEN, JAPAN 3191418 |
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Correspondence name and address
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PAUL TENG
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COOPER & DUNHAM, LLP
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30 ROCKEFELLER PLAZA, 20TH FLOOR
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NEW YORK, NY 10112
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