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Patent Assignment Details
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Reel/Frame:060664/0362   Pages: 4
Recorded: 07/29/2022
Attorney Dkt #:15639.0136-00000
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
NONE
Issue Dt:
Application #:
17643191
Filing Dt:
12/08/2021
Publication #:
Pub Dt:
11/10/2022
Title:
MEMORY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY DEVICE
Assignor
1
Exec Dt:
07/09/2022
Assignee
1
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondence name and address
FINNEGAN, HENDERSON, FARABOW, GARRETT & DUNNER, LL
901 NEW YORK AVENUE, NW
WASHINGTON, DC 20001-4413

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