Patent Assignment Details
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| Reel/Frame: | 019283/0363 | |
| Pages: | 3 |
| | Recorded: | 05/11/2007 | | |
| Attorney Dkt #: | TSM06-0073 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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05/18/2010
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Application #:
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11784721
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Filing Dt:
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04/09/2007
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Publication #:
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Pub Dt:
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10/09/2008
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Title:
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METHOD FOR FORMING HIGH-DRAIN-VOLTAGE TOLERANCE MOSFET TRANSISTOR IN A CMOS PROCESS FLOW WITH DOUBLE WELL DOSE APPROACH
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Assignee
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| NO. 8, LI-HSIN RD. 6 |
| SCIENCE-BASED INDUSTRIAL PARK |
| HSIN-CHU, TAIWAN 300-77 |
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Correspondence name and address
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SLATER & MATSIL, L.L.P.
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17950 PRESTON ROAD, SUITE 1000
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DALLAS, TX 75252
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