Patent Assignment Details
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| Reel/Frame: | 010380/0374 | |
| Pages: | 3 |
| | Recorded: | 11/08/1999 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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08/21/2001
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Application #:
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09435047
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Filing Dt:
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11/08/1999
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Title:
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FABRICATION METHOD FOR A METAL OXIDE SEMICONDUCTOR HAVING A DOUBLE DIFFUSED DRAIN
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Assignee
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| NO. 3, LI-HSIN RD. II., SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU CITY, TAIWAN R.O.C |
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Correspondence name and address
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THOMAS, KAYDEN, HORSTEMEYER, ET AL.
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DANIEL R. MCCLURE
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100 GALLERIA PARKWAY, SUITE 1500
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ATLANTA, GEORGIA 30339
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