Patent Assignment Details
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For pending or abandoned applications please consult USPTO staff.
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| Reel/Frame: | 065799/0445 | |
| Pages: | 4 |
| | Recorded: | 12/07/2023 | | |
| Conveyance: | NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). |
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Total properties:
7
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Patent #:
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Issue Dt:
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06/12/2007
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Application #:
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10904213
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Filing Dt:
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10/29/2004
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Publication #:
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Pub Dt:
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05/05/2005
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Title:
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METHOD OF MANUFACTURING NITRIDE SUBSTRATE FOR SEMICONDUCTORS, AND NITRIDE SEMICONDUCTOR SUBSTRATE
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Patent #:
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Issue Dt:
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06/24/2008
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Application #:
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11612481
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Filing Dt:
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12/19/2006
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Publication #:
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Pub Dt:
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05/03/2007
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Title:
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NITRIDE SEMICONDUCTOR WAFER
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Patent #:
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Issue Dt:
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10/12/2010
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Application #:
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11762786
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Filing Dt:
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06/14/2007
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Publication #:
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Pub Dt:
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01/03/2008
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Title:
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METHOD OF STORING GAN SUBSTRATE, STORED SUBSTRATE, AND SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE
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Patent #:
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Issue Dt:
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04/02/2013
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Application #:
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12179587
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Filing Dt:
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07/25/2008
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Publication #:
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Pub Dt:
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01/29/2009
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Title:
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GALLIUM NITRIDE CRYSTAL GROWTH METHOD, GALLIUM NITRIDE CRYSTAL SUBSTRATE, EPI-WAFER MANUFACTURING METHOD, AND EPI-WAFER
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Patent #:
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Issue Dt:
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06/21/2011
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Application #:
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12470493
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Filing Dt:
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05/22/2009
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Publication #:
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Pub Dt:
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12/03/2009
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Title:
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METHOD OF MANUFACTURING III NITRIDE CRYSTAL, III NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE
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Patent #:
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Issue Dt:
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09/03/2013
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Application #:
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13338263
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Filing Dt:
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12/28/2011
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Publication #:
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Pub Dt:
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12/27/2012
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Title:
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GROUP III NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME
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Patent #:
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Issue Dt:
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07/08/2014
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Application #:
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13907995
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Filing Dt:
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06/03/2013
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Publication #:
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Pub Dt:
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10/03/2013
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Title:
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PREPARED AND STORED GAN SUBSTRATE
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Assignee
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| 1-1, MARUNOUCHI 1-CHOME, CHIYODA-KU |
| TOKYO, JAPAN 100-8251 |
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Correspondence name and address
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CPA GLOBAL LIMITED
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LIBERATION HOUSE
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CASTLE STREET
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ST HELIER, JE1 1BL JERSEY
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