Patent Assignment Details
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| Reel/Frame: | 010203/0454 | |
| Pages: | 3 |
| | Recorded: | 08/25/1999 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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10/02/2001
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Application #:
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09383033
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Filing Dt:
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08/25/1999
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Title:
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METHOD OF FABRICATING A MOS TRANSISTOR WITH LOCAL CHANNEL ION IMPLANTATION REGIONS
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Assignees
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 3, LI-HSIN ROAD, II |
| HSINCHU CITY, TAIWAN R.O.C |
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| SCIENCE-BASED INDUSTRIAL PARK |
| NO. 3, LI-LHSIN ROAD II |
| HSINCHU CITY, TAIWAN R.O.C |
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Correspondence name and address
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THOMAS, KAYDEN, HORSTEMEYER ET AL
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DANIEL R. MCCLURE
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100 GALLERIA PARKWAY, SUITE 1500
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ATLANTA, GEORGIA 30339
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