Patent Assignment Details
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| Reel/Frame: | 011447/0465 | |
| Pages: | 3 |
| | Recorded: | 01/09/2001 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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02/12/2002
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Application #:
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09757201
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Filing Dt:
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01/09/2001
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Title:
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Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
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Assignee
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| OFFICE OF TECHNOLOGY DEVELOPMENT |
| ONE UNIVERSITY PLACE, SUITE A203 |
| RENSSELAER, NEW YORK 12144 |
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Correspondence name and address
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HESLIN & ROTHENBERG, P.C.
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MARY LOUISE GIOENI
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5 COLUMBIA CIRCLE
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ALBANY, NY 12203-5160
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